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Investigation on the AC and DC electrical conductivity of Sn3Sb2S6 thin films prepared by glancing angle deposition

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Abstract

Sn3Sb2S6 thin films were deposited by single source vacuum thermal evaporation using glancing angle deposition technique. The incident angle α between the particle flux and the normal to the substrate was varied from 0° to 85°. The structural, morphological and electrical properties were investigated by X-ray diffraction, scanning electron microscopy, and impedance spectroscopy, respectively. The effect of these properties as a function of the incident angle has been studied. The AC conductivity exhibited a Jonscher’s universal power law. It is observed that exponent s decreases with increasing measurement temperature. Further analysis revealed that, samples AC conductivity follows the correlated barrier hopping model. The Cole–Cole plot showed a single semicircle, indicating an equivalent circuit with a single parallel resistor R and capacitance C network. The activation energy obtained from both angular relaxation frequency and DC conductivity suggests that the carrier transport mechanism is a hopping mechanism thermally activated in the band gap.

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Authors and Affiliations

  1. Laboratoire de Photovoltaïque et Matériaux Semiconducteurs, ENIT-El Manar University, Tunis, Tunisia

    A. Larbi, I. Trabelsi & M. Kanzari

  2. Laboratory of Physics of Materials and Nanomaterials Applied at Environment (LaPhyMNE), Faculty of Sciences, Gabes University, 6072, Gabès, Tunisia

    H. Dahman

  3. IPEI Tunis Montfleury-Université de Tunis, Tunis, Tunisia

    M. Kanzari

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  1. A. Larbi
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  2. I. Trabelsi
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  3. H. Dahman
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Correspondence to H. Dahman.

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Larbi, A., Trabelsi, I., Dahman, H. et al. Investigation on the AC and DC electrical conductivity of Sn3Sb2S6 thin films prepared by glancing angle deposition. J Mater Sci: Mater Electron 29, 2907–2914 (2018). https://doi.org/10.1007/s10854-017-8221-7

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  • DOI: https://doi.org/10.1007/s10854-017-8221-7

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