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Impact of Zr content on multiphase zirconium–tungsten oxide (Zr–WOx) films and its MIS structure of Cu/Zr–WOx/p-Si Schottky barrier diodes

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Abstract

Metal–insulator–semiconductor (MIS) structure of Cu/Zr–WOx/p-Si Schottky diodes with different concentrations (0, 4 and 8 wt%) of Zr content were fabricated. The interfacial layer of zirconium–tungsten oxide (Zr–WOx) film was grown on p-type silicon (p-Si) wafer using jet nebulizer spray pyrolysis (JNSP) technique at the substrate temperature of 400 °C. After that, the Cu electrode was coated on the Zr–WOx film via vacuum deposition method. The multiphase (orthorhombic and cubic) crystal structures of Zr–WOx were revealed by X-ray diffraction (XRD) pattern. The surface morphological analysis using scanning electron microscope (SEM) showed the dissimilar structures of surface and energy dispersive X-ray diffraction (EDX) confirmed the presence of W, Zr and O atoms. Using UV–Visible (UV–Vis) and DC elecrical (I–V) analysis, the minimum band gap energy and average conductivity were obtained for higher concentration (8 wt%) of Zr content. The minimum barrier height (ΦB) and minimum ideality factor (n) values were attained for 4 wt% of Cu/Zr–WOx/p-Si Schottky barrier diode (SBD) under illumination condition.

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Acknowledgements

The authors gratefully acknowledge the financial support from the DST, Government of India, for the major research project (EMR/2016/007874).

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Authors and Affiliations

  1. Department of Physics, Sri Ramakrishna Mission Vidyalaya College of Arts and Science, Coimbatore, Tamil Nadu, 641020, India

    R. Marnadu, J. Chandrasekaran, M. Raja & V. Balasubramani

  2. Department of Physics, Bannari Amman Institute of Technology, Sathyamanglam, Tamil Nadu, 638401, India

    M. Balaji

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  1. R. Marnadu
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Correspondence to J. Chandrasekaran.

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Marnadu, R., Chandrasekaran, J., Raja, M. et al. Impact of Zr content on multiphase zirconium–tungsten oxide (Zr–WOx) films and its MIS structure of Cu/Zr–WOx/p-Si Schottky barrier diodes. J Mater Sci: Mater Electron 29, 2618–2627 (2018). https://doi.org/10.1007/s10854-017-8187-5

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