Abstract
In this study, numerical analysis of temperature variation for surface structure in AlxGa1−xN thin film grown by metal organic chemical vapour deposition has been performed. Numerical studies were carried out over morphologic views which were obtained by atomic force microscope. Numerical studies namely, effect of; annealing temperature to fractal size, occupied fraction. Also the interactions of those parameters each other were examined too. Fractal dimension value adheres to temperature with 3rd degree function. At increasing temperatures, the surface morphology changed from step-flow to grain-like surface structure. The structure which is regular and repetitive each other was impaired the AlxGa1−xN surface image at temperatures over 900 °C and was well simulated for fractal size.
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References
S. Strite, H. Morkoç, J. Vac. Sci. Technol. B 10, 1237 (1992)
H. Morkoç, Hand book of Nitride Semiconductors and Devices: (1). (Wiley, Berlin, 2008)
M. Tamer, M.K. Ozturk, S. Corekci, Y. Bas, A. Gultekin, G. Kurtulus, S. Ozcelik, E. Ozbay, J. Mater. Sci.: Mater. Electron. 27(3), 2582–2859 (2016)
I.K. Durukan, O. Bayal, G. Kurtulus, Y. Bas, A. Gultekin, M.K. Ozturk, S. Corekci, M. Tamer, S. Ozcelik, E. Ozbay, Superlattices Microstruct. 86, 379–389 (2015)
Y. Bas, P. Demirel, N. Akin, C. Baskose, Y. Ozen, B. Kinaci, M.K. Ozturk, S. Ozcelik, E. Ozbay, J. Mater. Sci.: Mater. Electron. 25(9), 3924–3932 (2014)
S. Corekci, S. Dugan, M.K. Ozturk, S.S. Cetin, M. Cakmak, S. Ozcelik, E. Ozbay, J. Electron. Mater. 45(7), 3278–3284 (2016)
J.I. Pankove, E.A. Miller, J.E. Berkeyheiser, RCA Rev. 32, 383 (1971)
A. Torabi, P. Ericson, E.J. Yarranton, W.E. Hoke, J. Vac. Sci. Technol. B 20(3), 1234–1237 (2002)
S.C. Binari, K. Ikossi, J.A. Raussos, W. Kruppa, D. Park, H.B. Dietrich, D.D. Koleske, A.E. Wickenden, R.L. Henry, IEEE Electron. Device Lett. 48(3), 465–471 (2001)
K. Oura, V.G. Lifshitsi, A.A. Saranin, A.V. Zotov, M. Katayama, Surface Science An Introduction, (Springer, Berlin, 2003)
H. Mishra, J.A. Chelvane, A. Arockiarajan, Sens. Actuators A 235, 218–226 (2015)
R. Tomescu, C. Kusko, Proceedings of IEEE International Semiconductor Conference-CAS, vol. 2, pp. 491–496, (2012)
Y. Li, J. Kim, Int. J. Numer. Methods Fluids 67, 1358–1372 (2011)
R. Heilbronner, S. Barrett, Image Analysis in Earth Sciences: Microstructures and Textures of Earth Materials (Springer, Berlin, 2014), pp. 137–170
S.D. Barrett, F.M. Leibsle, S.J. Dipple, Microsc. Anal. 47, 17–19 (1995)
S.D. Barrett, Sci. Data Manag. 1, 18–25 (1997)
B.R. Bickmore, E. Rufe, S. Barrett, M.F. Hochella, Geol. Mater. Res. 1, 5–19 (1999)
S. Petrović, L. Rožić, B. Grbić, N. Radić, J. Dostanić, S. Stojadinović, R. Vasilićr, Maced. J. Chem. Chem. Eng. 32(2), 309–317 (2013)
S. Corekci, Z. Tekeli, M. Cakmak, S. Ozcelik, Y. Dinc, O. Zeybek, E. Ozbay, Mater. Sci. Semicond. Process. 12(6), 238–242 (2009)
O. Zeybek, A.M. Davarpanah, D.S. Martin, S.D. Barrett, Surf. Sci. 601(9), 2012–2016 (2007)
O. Zeybek, A.M. Davarpanah, S.D. Barrett, Surf. Sci. 600(24), 5176–5181 (2006)
R. Colas, Mater. Charact. 46, 353–358 (2001)
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The authors acknowledge the financial support of the T.R. Prime Ministry State Planning Organization (Project Number: 2001K120590) and financial sport from Balikesir University Projects Department (Project Number: 0235).
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Zeybek, O., Ayaz, A., Öztürk, M.K. et al. Fractal size, occupied fraction study with annealing of heterostructure based AlxGa1−xN. J Mater Sci: Mater Electron 29, 2040–2044 (2018). https://doi.org/10.1007/s10854-017-8116-7
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DOI: https://doi.org/10.1007/s10854-017-8116-7