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Properties of nickel doped In2S3 thin films deposited by spray pyrolysis technique

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Abstract

In this work, nickel (Ni) doped indium sulfide (In2S3) films have been prepared by the spray pyrolysis (CSP) technique on glass substrates at 350 °C. The Ni doping level was changed with Ni:In (0, 2 and 4% in solution). The structural studies reveal that the deposited films are polycrystalline in nature exhibiting cubic structure. The crystallite size decreases from 27.5 to 23 nm and the root mean square roughness values increase from 13 to 18 nm. The transmission coefficient is about 70–55% in the visible region and 85–75% in near-infrared region. The band gap energy increases with nickel content from 2.74 to 2.82 eV for direct transitions. The refractive index values of In2S3:Ni thin films decrease from 2.43 to 2.40 and the extinction coefficient values are in the range 0.01–0.20. Besides, the AC conductivity contribution is interpreted using the universal Jonscher’s power law and it is found thermally activated and it can be described by the correlated barrier-hopping models. These studies help to form significant correlation between temperature and activation energy. Nyquist plots show that the electrical response is accurately fitted by the Cole–Cole model and represented by an equivalent electrical circuit which consists of a parallel combination of a resistance and a constant phase element. From this analysis, the evidence of grain boundary conduction has been observed.

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Acknowledgements

This work was supported by the Tunisian Ministry of Higher Education and Scientific Research, MINECO (Spain), FEDER Funds (Projects MAT2015-67458-P and CTQ2016-79461-R) and Fundación Ramón Areces, Spain (Project 2016-PO024).

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Authors and Affiliations

  1. Laboratory of Physics of Materials and Nanomaterials Applied at Environment (LaPhyMNE), Faculty of Sciences in Gabes, Gabes University, 6072, Gabès, Tunisia

    M. Kraini, N. Bouguila, N. Moutia, J. El Ghoul & K. Khirouni

  2. Department of Physics, College of Sciences, Al Imam Mohammad Ibn Saud Islamic University (IMSIU), Riyadh, 11623, Saudi Arabia

    J. El Ghoul

  3. Laboratory of Magnetism and Nanotechnology, Institute of Technological Research, Universidade de Santiago de Compostela, 15782, Santiago de Compostela, Spain

    C. Vázquez-Vázquez

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  1. M. Kraini
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  2. N. Bouguila
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  4. J. El Ghoul
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Correspondence to M. Kraini.

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Kraini, M., Bouguila, N., Moutia, N. et al. Properties of nickel doped In2S3 thin films deposited by spray pyrolysis technique. J Mater Sci: Mater Electron 29, 1888–1906 (2018). https://doi.org/10.1007/s10854-017-8099-4

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  • DOI: https://doi.org/10.1007/s10854-017-8099-4

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