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Infleunce of molar concentration on ethylene diamine tetra acetic acid (EDTA) added to tin sulfide (SnS) thin films grown by silar method

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Abstract

Nano thin films of SnS were prepared for solar cell application as absorber layer to analyse energy band gap. Thin films of Tin Sulphide (SnS) were deposited on glass substrate in room temperature by Successive Ionic Layer Adsorption and Reaction method. The changes in the properties of SnS were studied, when a complexing agent ethylenediaminetetraaceticacid (EDTA) added. The deposition parameters such as Dip duration is 35 s, Ex-dip duration is 5 s, Number of cycles are 25 and Number of dips are four were optimized to obtain good quality of SnS films. The Structural, morphological, topographical and optical properties of EDTA added Tin Sulphide thin films were characterized by X-ray diffraction (XRD), SEM, AFM, UV–Vis spectrometry and FT-IR techniques. The deposited SnS films are in amorphous and polycrystalline structure. The UV–Vis spectra of SnS films in the wavelength range of 200–900 nm have been observed to find the direct band gap. The band gap energy (Eg = 2.31, 2.27, 2.16, 2.09 eV) decreases with increase in molar concentration (0.05, 0.10, 0.15 and 0.20 M). Band gap decreases with increasing particle size.

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Authors and Affiliations

  1. Department of Physics, Anna University - BIT Campus, Tiruchirappalli, 620024, India

    P. Mani & J. Joseph prince

  2. Department of Physics, Bharathidasan University Constituent Model Women’s College, Veppur, 621717, India

    K. Manikandan

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  1. P. Mani
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  2. K. Manikandan
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  3. J. Joseph prince
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Mani, P., Manikandan, K. & prince, J.J. Infleunce of molar concentration on ethylene diamine tetra acetic acid (EDTA) added to tin sulfide (SnS) thin films grown by silar method. J Mater Sci: Mater Electron 28, 13602–13612 (2017). https://doi.org/10.1007/s10854-017-7200-3

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