Abstract
In this study, dually doped samples of Zn1−x−y Al x Me y O (Me: Ga, In) were prepared by sol–gel process followed by hot isostatic pressing for high temperature thermoelectric applications. Material characterizations were performed with differential thermal analysis-thermogravimetry, Fourier transform infrared spectroscopy and X-ray diffraction on the target phases. Successful doping of the samples was confirmed by X-ray photoelectron spectroscopy and energy dispersive X-ray analysis. Thermopower values of the samples are found to be relatively high in analogy to semiconducting behavior in which negative values indicate electrons are the dominant charge carriers (n-type). Substitution of Zn2+ by Ga3+ and In3+ for Zn1−x−y Al x Me y O (Me: Ga, In) increases electron concentration in the samples and thereby decreases the thermopower values compared to Zn0.98Al0.02O. Considering the absolute values, In doped samples have higher thermopower (α max = −162 µV/K at 585 °C for Zn0.96Al0.02In0.02O) compared to the Ga doped sample. Al and In dually doped Zn0.96Al0.02In0.02O could be considered as a promising n-type thermoelectric material for high temperature applications.
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Acknowledgements
This work was supported by the Scientific and Technological Research Council of Turkey (TUBITAK) under Project No. 115M579. We would like to thank to Dr. Umut Aydemir and Prof. G. J. Snyder at Northwestern University in Evanston, IL, USA for thermopower measurements.
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Kilinc, E., Demirci, S., Uysal, F. et al. High temperature thermopower of sol–gel processed Zn1−x−y Al x Me y O (Me: Ga, In). J Mater Sci: Mater Electron 28, 11769–11778 (2017). https://doi.org/10.1007/s10854-017-6982-7
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DOI: https://doi.org/10.1007/s10854-017-6982-7