Abstract
In comparison to Ge2Sb2Te5 (GST) and pure Sb70Se30 (SbSe) thin films, superlattice-like (SLL) Ge/Sb70Se30 (Ge/SbSe) has a higher crystallization temperature, larger crystallization activation energy, better data retention and lower power consumption. SLL Ge/SbSe thin films with different thickness of Ge and SbSe layers were prepared by magnetron sputtering system. The amorphous-to-crystalline transitions of SLL Ge/SbSe thin films were investigated through in situ film resistance measurement. The crystallization activation energy of SLL Ge/SbSe thin films was calculated from a Kissinger plot. The data retention time was estimated through isothermal time-dependent resistance measurement by Arrhenius equation. The phase structure of the thin films annealed at different temperatures was investigated by using X-ray diffraction. Phase change memory cells based on the SLL [Ge(8 nm)/SbSe(5 nm)]4 thin films were fabricated to test and evaluate the switching speed and operation consumption.
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Acknowledgments
The authors would like to acknowledge financial support of the Scientific Research Fund Project of Jiangsu University of Technology (KYY14011), the Natural Science Foundation of Jiangsu Province (BK2015020024), the University Natural Science Foundation of Jiangsu Province (15KJB430012), the Changzhou Sci and Tech Program (Grant No. CJ20159049) and the Open Fund of State Key Laboratory of Functional Materials for Informatics (KYZ14031).
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Wu, W., Hu, Y., Zhu, X. et al. High speed and low power consumption of superlattice-like Ge/Sb70Se30 thin films for phase change memory application. J Mater Sci: Mater Electron 27, 2183–2188 (2016). https://doi.org/10.1007/s10854-015-4008-x
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DOI: https://doi.org/10.1007/s10854-015-4008-x