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The role of using seed-layer assisted electrodeposition method on the growth and the photovoltaic properties of p-Cu2O/n-Si heterojunctions

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Abstract

A simple seed-layer assisted electro-deposition SLAE route has been successfully used to prepare a Cu2O film with a significant improvement in the crystalline quality, compactness and surface texture. This improvement was confirmed by studying the photo-luminescence emission properties and Raman spectroscopy of the Cu2O films grown with and without the SLAE route. The hall measurements reveal the enhancement in the hole mobility from 3.8 cm2/V s for the Cu2O films grown without using the SLAE route compared to 45 cm2/V s for the films grown by using the SLAE route. A detailed analysis of the J–V characteristics curve of the p-Cu2O/n-Si heterojunctions was performed. The dark J–V curves reveal the formation of p–n junction behavior. The photovoltaic parameters of p-Cu2O/n-Si heterojunctions exhibit an improvement in the p-Cu2O/n-Si solar cell efficiency from 0.05 to 0.31 % due to the adoption of the SLAE route.

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Authors and Affiliations

  1. Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, Sungai Dua, 11800, Penang, Penang, Malaysia

    Nezar G. Elfadill & M. R. Hashim

  2. Department of Electrical Engineering, The Higher Institute for Comprehensive Professions, Sirte, Libya

    K. A. Th. Thabit

Authors
  1. Nezar G. Elfadill
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  2. M. R. Hashim
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  3. K. A. Th. Thabit
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Correspondence to Nezar G. Elfadill.

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Elfadill, N.G., Hashim, M.R. & Thabit, K.A.T. The role of using seed-layer assisted electrodeposition method on the growth and the photovoltaic properties of p-Cu2O/n-Si heterojunctions. J Mater Sci: Mater Electron 26, 985–991 (2015). https://doi.org/10.1007/s10854-014-2493-y

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  • DOI: https://doi.org/10.1007/s10854-014-2493-y

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