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Structural and dielectric properties of Ba6−3xNd8+2xTi18O54 (x = 2/3) thin films processed by sol–gel technique

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Abstract

Ba6−3xNd8+2xTi18O54 (x = 2/3, BNT) thin films were obtained by the Pechini sol–gel technique on the Si and Pt/Ti/SiO2/Si substrates. The heat treatment schedule was researched by differential scanning calorimetry and thermal gravimetry. The effects of annealing temperature on crystallinity and morphological characteristic were investigated by X-ray diffraction and scanning electron microscope. The results show that a crystallized thin film with a tungsten bronze structure was obtained by annealing the films at 950 °C. With the aid of 2 wt% B2O3–2SiO2 addition, the crystallization temperature decreased to 900 °C. The dielectric characteristics measurement showed that the dielectric constant and the dielectric loss of the BNT thin films were 45.2 and 0.011 at 1 MHz frequency, the leakage current density was 4.13 × 10−6 A/cm2 at bias of 30 V.

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References

  1. M.W. Cole, P.C. Joshi, M.H. Ervin, M.C. Wood, R.L. Pfeffer, Thin Solid Films 374, 34 (2000)

    Article  Google Scholar 

  2. X.B. Chen, Patent US7230310 (2007)

  3. M.A. Chopra, S.W. Foster, J.F. Wenzel. Patent US5635767 (1997)

  4. R.J. Cava, W.F. Peck Jr, J.J. Krajewski, G.L. Roberts, B.P. Barber, H.M. O’Bryan, P.L. Gammel, Appl. Phys. Lett. 70, 1396 (1997)

    Article  Google Scholar 

  5. G. Chang, X.H. Zhou, Y.X. Li, S.R. Zhang, J. Mater. Sci. Mater. Electron. (2014). doi:10.1007/s10854-014-2228-0

    Google Scholar 

  6. R. Ubic, I.M. Reaney, W.E. Lee, Int. Mater. Rev. 43, 205 (1998)

    Article  Google Scholar 

  7. H. Ohsato, H. Kato, M. Mizuta, S. Nishigaki, T. Okuda, J. Appl. Phys. 34, 5413 (1995)

    Article  Google Scholar 

  8. P. Laffez, G. Desgardin, B. Raveau, J. Mater. Sci. 30, 267 (1995)

    Article  Google Scholar 

  9. X.M. Chen, Y. Li, J. Am. Ceram. Soc. 85(3), 579 (2002)

    Article  Google Scholar 

  10. H. Ohsato, M. Imaeda, Mater. Chem. Phys. 79, 208 (2003)

    Article  Google Scholar 

  11. Y. Wu, R.Z. Zuo, J.J. Zhang, Y.Y. Zhou, Z.X. Yue, J. Mater. Sci. Mater. Electron. 22, 106 (2011)

    Article  Google Scholar 

  12. L.X. Pang, H. Wang, D. Zhou, W.H. Liu, Mater. Chem. Phys. 123, 727 (2010)

    Article  Google Scholar 

  13. J. Pei, Z.X. Yue, F. Zhao, Z.L. Gui, L.T. Li, J. Am. Ceram. Soc. 90, 3131 (2007)

    Article  Google Scholar 

  14. Y.B. Xu, G.H. Huang, Y.Y. He, Ceram. Int. 31, 21 (2005)

    Article  Google Scholar 

  15. Z.X. Yue, C.B. Qin, Y.C. Zhang, F. Zhao, Z.L. Gui, L.T. Li, J. Mater. Sci. 39, 1087 (2004)

    Article  Google Scholar 

  16. Y.B. Xu, X.M. Chen, Y.J. Wu, J. Am. Ceram. Soc. 83, 2893 (2000)

    Article  Google Scholar 

  17. Y.D. Xia, G.H. Shi, D. Wu, Z.G. Liu, J. Electron. Mater. 33, 1236 (2004)

    Article  Google Scholar 

  18. Y.D. Xia, G.H. Shi, D. Wu, Z.G. Liu, Thin Solid Films 427, 208 (2005)

    Article  Google Scholar 

  19. M.P. Pechini, Patent US3330697 (1967)

  20. S.J. Qiu, H.Q. Fan, X.D. Zheng, J. Sol–Gel. Sci. Technol. 42, 21 (2007)

    Article  Google Scholar 

  21. A.N. Tarale, D.J. Salunkhe, P.B. Joshi, S.B. Kulkarni, V.R. Reddy, J. Mater. Sci. Mater. Electron. 24, 4457 (2013)

    Article  Google Scholar 

  22. J. Zhu, J. Zhou, L.S. Xu, J. Shen, X.Y. Yang, W. Chen, Synth. React. Inorg. M 38, 168 (2008)

    Google Scholar 

  23. S.A.M. Lima, M.R. Davolos, C. Legnani, W.G. Quirino, M. Cremona, J. Alloys Compd. 418, 35 (2006)

    Article  Google Scholar 

  24. H.F. Ji, W. Ren, L.Y. Wang, P. Shi, X.F. Chen, X.Q. Wu, X. Yao, S.T. Lau, Q.F. Zhou, K.K. Shung, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 58, 2042 (2011)

    Article  Google Scholar 

  25. J.Y. Eum, S.-O. Hwang, J. Ryu, J.-W. Kim, C.Y. Koo, J.-Y. Lee, H.Y. Lee, Ferroelectrics 465(1), 76 (2014)

    Article  Google Scholar 

  26. V. Kumar, V. Kumar, S. Som, A. Yousif, N. Singh, O.M. Ntwaeaborwa, A. Kapoor, H.C. Swart, J. Colloid Interface Sci. 428, 8 (2014)

    Article  Google Scholar 

  27. J.W. Zhai, X. Yao, X.G. Cheng, L.Y. Zhang, H. Chen, Mater. Sci. Eng. B 94, 164 (2002)

    Article  Google Scholar 

  28. M. Cerneaa, L. Trupinaa, C. Dragoia, B.S. Vasileb, R. Trusca, J. Alloys Compd. 515, 166 (2012)

    Article  Google Scholar 

Download references

Acknowledgments

This article is supported by Project supported by the Fundamental Research Funds for the Central Universities of Ministry of Education of China.

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Authors and Affiliations

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China

    Weixin Zhu, Yao Zhang, Yixi Yang, Dong Zhou & Chengtao Yang

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  1. Weixin Zhu
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  2. Yao Zhang
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  3. Yixi Yang
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  4. Dong Zhou
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Correspondence to Chengtao Yang.

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Zhu, W., Zhang, Y., Yang, Y. et al. Structural and dielectric properties of Ba6−3xNd8+2xTi18O54 (x = 2/3) thin films processed by sol–gel technique. J Mater Sci: Mater Electron 26, 927–932 (2015). https://doi.org/10.1007/s10854-014-2484-z

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