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Hot-wire semiconductor metal oxide gas sensor based on F-doped SnO2

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Abstract

Fluorine-doped nanocrystalline tin oxide materials were prepared via sol–gel method with tin dichloride dihydrate (SnCl2·2H2O) as the precursor and hydrofluoric acid as the dopant source. The materials were characterized by Fourier transform infrared spectra, scanning electron microscopy, energy-dispersive X-ray spectrometry and X-ray diffraction. Hot-wire semiconductor metal oxide gas sensor was fabricated based on F-doped tin dioxide (SnO2). Gas-sensing properties were tested and gas-sensing mechanism was discussed. The results showed that the average particle sizes of F-SnO2 increased from 8 to 20 nm with increasing atomic ratio of n(F)/n(Sn) from 0 to 6.14 %. The optimal sensor response to 1,000 ppm hydrogen (H2) was improved from 69 to 800 mV at 4.43 %. The response and recovery time were <5 and 30 s, respectively. The mechanism analysis showed that the electrical conductivity of SnO2 was obviously increased by doping fluorine (F) because of fluorine ions occupying the position of oxygen in the SnO2 lattice creating free electrons, thus the response of gas sensor to H2 was significantly improved.

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Acknowledgments

The Project Sponsored by the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry of China (No. 2012-940), and Foundation of He’nan Educational Committee of China (No. 13B530364, No. 14A530001).

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Authors and Affiliations

  1. School of Chemical Engineering and Energy, Zhengzhou University, Zhengzhou, 450001, China

    Xueyuan Guo, Guangwei Li & Zili Zhan

  2. School of Information Engineering, Zhengzhou University, Zhengzhou, 450001, China

    Qingran Zhan

  3. Henan Hanwei Electronics Co. Ltd., Zhengzhou, 450001, China

    Guixin Jin

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  1. Xueyuan Guo
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  2. Qingran Zhan
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  3. Guixin Jin
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  4. Guangwei Li
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  5. Zili Zhan
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Correspondence to Zili Zhan.

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Guo, X., Zhan, Q., Jin, G. et al. Hot-wire semiconductor metal oxide gas sensor based on F-doped SnO2 . J Mater Sci: Mater Electron 26, 860–866 (2015). https://doi.org/10.1007/s10854-014-2476-z

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  • DOI: https://doi.org/10.1007/s10854-014-2476-z

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