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Study of lattice deformation and atomic bond length for AlxGa1−xN epi-layers with synchrotron radiation X-ray absorption spectroscopy

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Abstract

The lattice deformation in wurtzite AlxGa1−xN epi-layers (0.19 ≤ x ≤ 0.58) grown on sapphire substrates by metal organic chemical vapor deposition has been studied with synchrotron radiation X-ray absorption spectroscopy and X-ray diffraction. The result reveals that Al substitution for Ga in AlGaN epi-layers induces a significant contraction in crystal lattice and c/a ratio (c and a are the lattice constants for AlGaN epi-layer, respectively), while the substitution only results in a slight expansion in internal parameter u, which is used to describe the lattice deformation of wurtzite structure. This fact suggests that u is not sensitive to Al substitution for Ga. A detailed analysis of extended X-ray absorption fine structure of Ga K-edge spectra show that the Ga–N bond length has only a weak composition dependence, while the Ga–Ga (Al) bond lengths are strongly dependent on the Al composition.

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References

  1. F. Qian, M. Brewster, S.K. Lim, Y. Ling, Nano Lett. 12, 3344 (2012)

    Article  Google Scholar 

  2. S. Wang, X. Zhang, H. Guo, H. Yang, M. Zhu, L. Cheng, X. Zeng, Y. Cui, J. Mod. Opt. 60, 2012 (2013)

    Article  Google Scholar 

  3. D.G. Zhao, Z.S. Liu, J.J. Zhu, S.M. Zhang, D.S. Jiang, H. Yang, J.W. Liang, X.Y. Li, H.M. Gong, Appl. Surf. Sci. 253, 2452 (2006)

    Article  Google Scholar 

  4. H.M. Ng, D. Doppalapudi, E. Iliopoulos, T.D. Moustakas, Appl. Phys. Lett. 74, 1036 (1999)

    Article  Google Scholar 

  5. L. Wang, R. Li, D. Li, N. Liu, L. Liu, W. Chen, C. Wang, Z. Yang, X. Hu, Appl. Phys. Lett. 96, 061110 (2010)

    Article  Google Scholar 

  6. T.M. Altahtamouni, J.Y. Lin, H.X. Jiang, J. Appl. Phys. 113, 123501 (2013)

    Article  Google Scholar 

  7. C.J. Wu, Z.C. Feng, W.M. Chang, C.C. Yang, H.H. Lin, Appl. Phys. Lett. 101, 091902 (2012)

    Article  Google Scholar 

  8. W. Zheng, Z.C. Feng, F.H. Chang, J.F. Lee, R.S. Zheng, D.S. Wuu, C.W. Liu, Adv. Mater. Res. 663, 361 (2013)

    Article  Google Scholar 

  9. W. Zheng, L.Y. Jang, J.M. Lee, R.S. Zheng, C.W. Liu, P. Becla, Z.C. Feng, Adv. Mater. Res. 634, 2489 (2013)

    Article  Google Scholar 

  10. M. Katsikini, E.C. Paloura, J. Antonopoulos, P. Bressler, T.D. Moustakas, J. Cryst. Growth 230, 405 (2001)

    Article  Google Scholar 

  11. J.C. Woicik, K.F. Ludwig, T.D. Moustakas, Appl. Phys. Lett. 100, 162105 (2012)

    Article  Google Scholar 

  12. A.L. Ankudinov, B. Ravel, J.J. Rehr, S.D. Conradsom, Phys. Rev. B 58, 7565 (1998)

    Article  Google Scholar 

  13. B. Ravel, M. Newville, J. Synchrotron Radiat. 12, 537 (2005)

    Article  Google Scholar 

  14. M. Newville, J. Synchrotron Radiat. 8, 322 (2001)

    Article  Google Scholar 

  15. S. Yoshida, S. Misawa, S. Gonda, J. Appl. Phys. 53, 6844 (1982)

    Article  Google Scholar 

  16. S. Fan, Z. Qin, C. He, M. Hou, X. Wang, B. Shen, W. Li, W. Wang, D. Mao, P. Jin, J. Yan, P. Dong, Opt. Express 21, 24497 (2013)

    Article  Google Scholar 

  17. M.S. Kim, K.G. Yim, S. Kim, G. Nam, J.Y. Leem, J. Sol Gel Sci. Technol. 59, 364 (2011)

    Article  Google Scholar 

  18. P. Lawaetz, Phys. Rev. B 5, 4039 (1972)

    Article  Google Scholar 

Download references

Acknowledgments

The work at National Taiwan University was supported by the research funds of NSC 98-2221-E-002-015-MY3 and 98-3114-E-005-002-CC2, and also by the NTU Excellent Research Project (10R80908). The work was also supported by the Innovation Project for Graduate Student of Jiangsu Province (KYLX_0127).

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Authors and Affiliations

  1. Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China

    Shuchang Wang, Xiong Zhang & Yiping Cui

  2. Institute of Photonics and Optoelectronics, Department of Electrical Engineering, and Center for Emerging Material and Advanced Devices, National Taiwan University, Taipei, 10617, Taiwan

    Shuchang Wang, Muchi Liu, Bowei Wang & Zhe Chuan Feng

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  1. Shuchang Wang
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  2. Xiong Zhang
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  3. Muchi Liu
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Correspondence to Xiong Zhang.

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Wang, S., Zhang, X., Liu, M. et al. Study of lattice deformation and atomic bond length for AlxGa1−xN epi-layers with synchrotron radiation X-ray absorption spectroscopy. J Mater Sci: Mater Electron 25, 4800–4805 (2014). https://doi.org/10.1007/s10854-014-2236-0

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  • DOI: https://doi.org/10.1007/s10854-014-2236-0

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