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Hydrostatic pressure effect on lattice thermal conductivity of wurtzite GaN semiconductor

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Abstract

Debye–Callaway model in combination with the Murnaghan and Clapeyron equations was used to calculate the hydrostatic pressure effects on lattice thermal conductivity (LTC) of wurtzite gallium nitride. The calculations are for the longitudinal and transverse phonon modes. The results are efficiently fitted with the whole temperature (1–400) of the experimental data. The peak value of LTC declines with the applied pressure from 0 to 14 GPa. This result is due to the decreasing Debye temperature, group velocity and lattice volume. Furthermore, pressure affected the number of dislocations, sample size and Gruneisen parameter (longitudinal and transverse) modes. Consequently, the values of above parameters at zero GPa are \(2.5\times {10}^{13 }{{\text{m}}}^{-2}, 1.8 {\text{mm}}\), \(0.93 \,{\text{and}}\, 0.52\), whilst the values at 14 GPa are \(15\times {10}^{15}{\mathrm{ m}}^{-2}, 1.68 {\text{mm}},\) \(0.818 \,{\text{and}}\, 0.469\), respectively. The results show that hydrostatic pressure does not affect the number of impurities and electron concentrations.

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Acknowledgements

We would like to thank Mr Hawbash H Karim from the Department of Physics, Faculty of Science and Health, Koya University, Kurdistan Region, Iraq and Mr Ibrahim Nazem Qadir from the College of Science, University of Raparin. Kurdistan Region, for their help and assistance. We would like to thank the College of Science at the University of Salahaddin–Erbil, for the financial support.

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  1. Department of Physics, College of Science, Salahaddin University-Erbil, Erbil, Kurdistan Region, 44002, Iraq

    Diman M Abdullah & M S Omar

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  1. Diman M Abdullah
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  2. M S Omar
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Correspondence to Diman M Abdullah.

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Abdullah, D.M., Omar, M.S. Hydrostatic pressure effect on lattice thermal conductivity of wurtzite GaN semiconductor. Bull Mater Sci 47, 80 (2024). https://doi.org/10.1007/s12034-024-03162-y

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