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Diffusion induced residual stress in comb-type microaccelerometer structure

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Abstract

This paper presents the effect of residual stresses due to deep boron diffusion on microaccelerometer structure. The microaccelerometer structure was simulated at various residual stresses using finite element method. The residual stress due to the diffusion process was estimated to be 450 MPa by using Raman spectroscopy. After fabricating the microaccelerometer structure, the deflection (~2 μm) of the moving comb fingers due to the stress was found to be in good agreement with the simulated value (2.1 μm). Sensitivity of the accelerometers was measured to be ~50 mV/g for 0–30 g range. In the initial range (0–5 g), the output of the accelerometers are depicting nonlinearity as anticipated from the simulated results.

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Acknowledgments

The authors would like to thank Director, SSPL for his continuous support and for the permission to publish this work.

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Authors and Affiliations

  1. Solid State Physics Laboratory, DRDO, Lucknow Road, Timarpur, Delhi, 110054, India

    Shankar Dutta,  Shaveta, Md. Imran, Ramjay Pal & R. K. Bhan

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  1. Shankar Dutta
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  2. Shaveta
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  3. Md. Imran
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  4. Ramjay Pal
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  5. R. K. Bhan
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Correspondence to Shankar Dutta.

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Dutta, S., Shaveta, Imran, M. et al. Diffusion induced residual stress in comb-type microaccelerometer structure. J Mater Sci: Mater Electron 25, 3828–3832 (2014). https://doi.org/10.1007/s10854-014-2095-8

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  • DOI: https://doi.org/10.1007/s10854-014-2095-8

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