Abstract
La2O3-doped Ba0.8Sr0.2TiO3 dielectric ceramics were prepared by conventional solid state ceramic route. Scanning electron microscope was employed to observe the surface morphologies. The capacitance C and dielectric loss factor D of the samples were measured with automatic LCR Meter 4225 at 10 kHz respectively. The results show that: ε r of the samples decreases and tgδ first decreases then increases with increasing amount of La2O3 doping. ε r reaches better value, tgδ obtains the minimum value at 0.5 mol% La2O3. ε r increases and tgδ decreases when sintering temperature increases. The samples doped with 0.5 mol% La2O3 sintered at 1,350 °C for 10 h exhibited attractive properties, including high relative dielectric constant (>4,000), low dielectric loss (16.8 × 10−4), low temperature coefficient of relative dielectric constant(<±21 %) in the temperature range of +25 to +85 °C.
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Acknowledgments
The authors wish to acknowledge the financial support of the National Natural Science Foundation of China (Grant No. 60971008) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (No. 200804870071). Thank the staff at the Analytical and Testing Center of Huazhong University of Science and Technology for their great help.
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Rao, W., Wang, YB., Wang, YA. et al. Dielectric properties of La2O3-doped Ba0.8Sr0.2TiO3 ceramics. J Mater Sci: Mater Electron 24, 4947–4950 (2013). https://doi.org/10.1007/s10854-013-1505-7
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DOI: https://doi.org/10.1007/s10854-013-1505-7