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Microcrystalline silicon films fabricated by bias-assisted hot-wire chemical vapor deposition

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Abstract

Microcrystalline silicon films (μc-Si:H) were deposited on stainless steel substrates by bias-assisted hot-wire chemical vapor deposition. The effect of substrate bias and substrate temperature on the crystallinity of μc-Si:H films was studied by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The results show that both the Raman peak position and the crystalline fraction of the μc-Si:H films deposited at 200 °C were obviously improved by introducing −800 V substrate bias. The films deposited at 200 °C with −800 V substrate bias show strongly sharpened Si (111) peak together with Si (220) and Si (311) peaks, which was different from a weak Si (111) peak for those deposited without substrate bias. By increasing the substrate temperature from 200 to 300 °C, while keeping the substrate bias at −800 V, the crystallinity of the silicon films was further improved, and μc-Si:H films with crystalline fraction of 74 % was obtained.

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Acknowledgments

This work is supported by the funding of Jiangsu Innovation Program for Graduate Education (CXZZ11_0206).

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Authors and Affiliations

  1. Department of Physics, Changshu Institute of Technology, Changshu, 215500, China

    Lei Zhang, Xuefan Jiang, Bin Qian & Zhida Han

  2. College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, 29 Yudao Street, Nanjing, 210016, China

    Lei Zhang, Honglie Shen & Jiayi You

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  1. Lei Zhang
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  2. Honglie Shen
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  4. Xuefan Jiang
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Correspondence to Lei Zhang.

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Zhang, L., Shen, H., You, J. et al. Microcrystalline silicon films fabricated by bias-assisted hot-wire chemical vapor deposition. J Mater Sci: Mater Electron 24, 4574–4577 (2013). https://doi.org/10.1007/s10854-013-1444-3

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