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Optoelectronics behaviour of ZnO nanorods for UV detection

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Abstract

In this study ZnO nanorods have been synthesized by a chemical precipitation method. The room temperature UV–Vis absorption spectra of the ZnO nanorods indicated two absorption peaks in the UV region, one in the near UV region and the other attributed to the band gap of ZnO. The Photoluminescence spectra of ZnO nanorods show two emission bands, one ultraviolet emission band at 378 nm and the other in the defect related yellow emission band near 550 nm. The stimulated yellow luminescence of ZnO nanorods were affected by the synthesis time and annealing temperature. The same ZnO nanorods were deposited onto the ITO substrate to form a UV photoconductive detector. The ratio of the UV photogenerated current to dark current was as high as nine times under 3 V bias. Hence, these nanorods can be promising materials in the use of UV radiation detection.

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Acknowledgments

The author acknowledge CSIR for research fellowships and supports extended for this work.

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Authors and Affiliations

  1. Material Research Division, Academy of Scientific and Innovative Research, Central Scientific Instruments Organisation, Sector 30 C, Chandigarh, India

    Mrinmoy Misra, Pawan Kapur & Madan Lal Singla

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  1. Mrinmoy Misra
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  2. Pawan Kapur
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  3. Madan Lal Singla
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Correspondence to Mrinmoy Misra.

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Misra, M., Kapur, P. & Singla, M.L. Optoelectronics behaviour of ZnO nanorods for UV detection. J Mater Sci: Mater Electron 24, 3940–3945 (2013). https://doi.org/10.1007/s10854-013-1343-7

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  • DOI: https://doi.org/10.1007/s10854-013-1343-7

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