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Effects of annealing on the formation of Mg2Si film prepared by resistive thermal evaporation method

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Abstract

The effects of annealing time and temperature on the formation and structure of magnesium silicide (Mg2Si) films were investigated. Magnesium films of 380 nm thickness were deposited on Si (111) substrates using resistive thermal evaporation method. The films were then annealed in an annealing furnace under a low vacuum atmosphere of 10−1–10−2 Pa. The results showed that the crystallization quality of Mg2Si films was strongly affected by the annealing time and temperature. Annealing at 400 °C for 4 h was the optimal preparation conditions for Mg2Si films.

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Acknowledgments

Foundation item: Project is supported by the National Natural Science Foundation of China under Grant No. 61264004, the Key Sci-Tech Research Project of Guizhou Province of China under Grant No. [2011]3015, the Special Fund for Construction of Sci-Tech Innovative Talents Team of Guizhou Province of China under Grant No. [2011]4002, and the Fund for International Sci-Tech Cooperation of Guizhou Province of China under Grant No. [2012]7004, and the National Natural Science Foundation of Guizhou Province of China under Grant No. [2011]2323, and the Young Talents Training Project of Guizhou Province of China under Grant No. [2012]152, and the Introducing Talents Foundation for the Doctor of Guizhou University of China under No. [2010]032.

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  1. Institute of Advanced Optoelectronic Materials and Technology, College of Science, Guizhou University, Guiyang, 550025, China

    H. Yu, Q. Xie & Q. Chen

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  1. H. Yu
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  2. Q. Xie
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  3. Q. Chen
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Correspondence to Q. Xie.

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Yu, H., Xie, Q. & Chen, Q. Effects of annealing on the formation of Mg2Si film prepared by resistive thermal evaporation method. J Mater Sci: Mater Electron 24, 3768–3775 (2013). https://doi.org/10.1007/s10854-013-1316-x

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  • DOI: https://doi.org/10.1007/s10854-013-1316-x

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