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Growth of (111)-oriented epitaxial magnesium silicide (Mg2Si) films on (001) Al2O3 substrates by RF magnetron sputtering and their properties

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Abstract

Epitaxial Mg2Si films with (111) orientation were successfully grown at 300 °C on (001) Al2O3 insulating substrates by RF magnetron sputtering method. The optimal conditions for the epitaxial growth were identified as a low deposition rate and high deposition pressure above 60 mTorr. X-ray diffraction and transmission electron microscopy analysis confirmed the growth of (111)-oriented epitaxial Mg2Si films with the following relationship: (111) Mg2Si//(001)Al2O3. The conduction type of the epitaxial films was p-type up to 450 °C, which is same conduction type of the (110)-one-axis oriented ones. The electrical conductivity of the epitaxial films was lower than that of (110)-one-axis oriented ones.

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Acknowledgements

This research was partially supported by Kakenhi [26630304 (JSPS)]. PSS wishes to thank Japan society for promotion of science (JSPS) for financial assistance.

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Authors and Affiliations

  1. Department of Innovative and Engineered Materials, Tokyo Institute of Technology, J2-43, 4259 Nagatsuta-cho, Midori-ku, Yokohama, 226-8502, Japan

    Atsuo Katagiri, Shota Ogawa, Mutsuo Uehara, P. S. Sankara Rama Krishnan, Mao Kurokawa, Masaaki Matsushima, Takao Shimizu & Hiroshi Funakubo

  2. School of Materials and Chemical Technology, Tokyo Institute of Technology, Nagatsuta-cho, Midori-ku, Yokohama, 226-8502, Japan

    Takao Shimizu, Kensuke Akiyama & Hiroshi Funakubo

  3. Kanagawa Institute of Industrial Science and Technology, 705-1 Shimoimaizumi, Ebina, Kanagawa, 243-0435, Japan

    Kensuke Akiyama & Hiroshi Funakubo

Authors
  1. Atsuo Katagiri
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  2. Shota Ogawa
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  6. Masaaki Matsushima
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  7. Takao Shimizu
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  9. Hiroshi Funakubo
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Correspondence to Hiroshi Funakubo.

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Katagiri, A., Ogawa, S., Uehara, M. et al. Growth of (111)-oriented epitaxial magnesium silicide (Mg2Si) films on (001) Al2O3 substrates by RF magnetron sputtering and their properties. J Mater Sci 53, 5151–5158 (2018). https://doi.org/10.1007/s10853-017-1902-z

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