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Nanocrystalline ITO-Sn2S3 transparent thin films for photoconductive sensor applications

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Abstract

Nanocrystalline indium tin oxide (ITO) film containing 5 wt% Sn was prepared on glass substrate by the spray pyrolysis technique at a substrate temperature of 500 °C. In order to enhance the photosensitivity of ITO, thiourea (CS(NH2)2 was added to the precursor to obtain the [S]/[In] proportion of 0.1, 0.2, 0.4 and 0.6. The X-ray diffraction patterns showed that beside the bixbyite structure of ITO, the characteristic peaks corresponding to Sn2S3 appeared in XRD profiles recorded for the films with [S]/[In] = 0.1 and 0.2. In addition, sulfur additive caused a considerable decline in crystallinity quality. The optical properties of the films were studied using transmittance measurements in the wavelength range 300–1,000 nm. As a result, ITO and ITO-Sn2S3 thin films were prepared with resistivity of 3.06–3.7 × 10−4 Ω cm and a transmittance of 88–91 % at the wavelength of 550 nm. Moreover, the electrical resistances of ITO and ITO-Sn2S3 films as a function of time were measured in darkness and under illumination of light in the visible range. The photoresistance results revealed that the ITO-Sn2S3 film with [S]/[In] = 0.2 was efficiently sensitive to visible light for photoconductive sensor applications, besides being high conductive and transparent.

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Authors and Affiliations

  1. Department of Physics, Mashhad Branch, Islamic Azad University, Mashhad, Iran

    L. Motevalizadeh & M. Khorshidifar

  2. Materials and Electroceramics Laboratory, Department of Physics, Ferdowsi University of Mashhad, Mashhad, Iran

    M. Ebrahimizadeh Abrishami

  3. Department of Physics, Damghan University, Damghan, Iran

    M. M. Bagheri Mohagheghi

Authors
  1. L. Motevalizadeh
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  2. M. Khorshidifar
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  3. M. Ebrahimizadeh Abrishami
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  4. M. M. Bagheri Mohagheghi
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Correspondence to M. Ebrahimizadeh Abrishami.

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Motevalizadeh, L., Khorshidifar, M., Ebrahimizadeh Abrishami, M. et al. Nanocrystalline ITO-Sn2S3 transparent thin films for photoconductive sensor applications. J Mater Sci: Mater Electron 24, 3694–3700 (2013). https://doi.org/10.1007/s10854-013-1305-0

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  • DOI: https://doi.org/10.1007/s10854-013-1305-0

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