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Effect of Mn doping on the structural, morphological, optical and magnetic properties of indium tin oxide films

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Abstract

We report on the preparation and characterization of high purity manganese (3–9 wt.%) doped indium tin oxide (ITO, In:Sn = 90:10) films deposited by sol–gel mediated dip coating. X-ray diffraction and selected area electron diffraction showed high phase purity cubic In2O3 and indicated a contraction of the lattice with Mn doping. High-resolution transmission electron microscopy depicted a uniform distribution of ∼20 nm sized independent particles and particle induced x-ray emission studies confirmed the actual Mn ion concentration. UV-Vis diffuse reflectance measurements showed band gap energy of 3.75 eV and a high degree of optical transparency (90%) in the 100–500 nm thick ITO films. X-ray photoelectron spectroscopy core level binding energies for In 3d5/2 (443.6 eV), Sn 3d5/2 (485.6 eV) and Mn 2p3/2 (640.2 eV) indicated the In3+, Sn4+ and Mn2+ oxidation states. Magnetic hysteresis loops recorded at 300 K yield a coercivity Hc ∼ 80 Oe and saturation magnetization Ms ∼ 0.39 μB/Mn2+ ion. High-temperature magnetometry showed a Curie temperature T c > 600 K for the 3.2% Mn doped ITO film.

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Acknowledgements

The research work carried out at Boise State University was supported in part by grants from Petroleum Research Fund (AC grant, PRF#41870-AC10), National Science Foundation (DMR-MRI grant; NSF-Idaho-EPSCoR program (EPS-0447689); NSF-CAREER program (DMR-0449639)) and the Department of Energy (DoE-EPSCoR program (DE-FG02-04ER46142). The support for the work in CGCRI, India was under CTSM program [No. CMM 0022 (1)]. We thank A. Thurber for help with preliminary data collection. A portion of the research described in this paper was performed in the Environmental Molecular Sciences Laboratory, a national scientific user facility sponsored by the Department of Energy’s Office of Biological and Environmental Research and located at Pacific Northwest National Laboratory.

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Authors and Affiliations

  1. Department of Physics, Boise State University, Boise, ID, 83725-1570, USA

    K. M. Reddy, J. Hays & A. Punnoose

  2. Sol-gel Division, Central Glass and Ceramic Research Institute, Kolkata, 700 032, India

    S. Kundu, L. K. Dua & P. K. Biswas

  3. Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA, 99352, USA

    C. Wang, V. Shutthanandan & M. H. Engelhard

  4. Centro de Investigación en Energía, Universidad Nacional Autonoma de Mexico, Temixco, Morelos, 62580, Mexico

    X. Mathew

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  1. K. M. Reddy
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  2. J. Hays
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  3. S. Kundu
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  4. L. K. Dua
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  5. P. K. Biswas
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  6. C. Wang
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  7. V. Shutthanandan
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  8. M. H. Engelhard
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  9. X. Mathew
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  10. A. Punnoose
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Correspondence to A. Punnoose.

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Reddy, K.M., Hays, J., Kundu, S. et al. Effect of Mn doping on the structural, morphological, optical and magnetic properties of indium tin oxide films. J Mater Sci: Mater Electron 18, 1197–1201 (2007). https://doi.org/10.1007/s10854-007-9277-6

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  • DOI: https://doi.org/10.1007/s10854-007-9277-6

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