Skip to main content
SpringerLink
Log in

Effect of sputtering power and annealing temperature on the properties of indium tin oxide thin films prepared from radio frequency sputtering using powder target

  • Published:
Journal of Materials Science: Materials in Electronics Aims and scope Submit manuscript

Abstract

Indium tin oxide (ITO) thin films were deposited on quartz substrates by radio frequency (RF) sputtering with different RF power (100–250 W) using the powder target at room temperature. The effect of sputtering power on their structural, electrical and optical properties was systematically investigated. The intensity of (400) orientation clearly increases with the sputtering power increases, although the films have (222) preferred orientation. Increasing sputtering power is benefit for lower resistivity and transmittance. The films were annealed at different temperature (500–800 °C), then we explored the relationship between their electro-optical and structural properties and temperature. It has been observed that the annealed films tend to have (400) orientation and then show the lower resistivity and transmittance. The ITO thin film prepared by RF sputtering using powder target at 700 °C annealing temperature and 200 W sputtering power has the resistivity of 2.08 × 10−4 Ω cm and the transmittance of 83.2 %, which specializes for the transparent conductive layers.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6

Similar content being viewed by others

References

  1. C. Trejo-Crua, A. Mendoza-Galván, A. López-Beltrán, M. Gracia-Jiménez, Thin Solid Films 517, 4615–4620 (2009)

    Article  Google Scholar 

  2. L. Kerkache, A. Layadi, A. Mosser, J Alloys Compd 485, 46–50 (2009)

    Article  CAS  Google Scholar 

  3. E. Medvedovski, N. Alvarez, O. Yankov, M. Olsson, Ceram Inter 34, 1173–1182 (2008)

    Article  CAS  Google Scholar 

  4. O. Tuna, Y. Selamet, G. Aygun, L. Ozyuzer, J. Phys. D. Appl. Phys. 43, 055402 (2010)

    Article  Google Scholar 

  5. M.H. Ahn, E.S. Cho, S.J. Kwon, Appl. Surf. Sci. 258, 1242–1248 (2011)

    Article  CAS  Google Scholar 

  6. E. Celik, U. Aybarc, M.F. Ebeoglugil, I. Birlik, O. Culha, J Sol Gel Sci Technol 50, 337–347 (2009)

    Article  CAS  Google Scholar 

  7. K. Maki, N. Komiya, A. Suzuki, Thin Solid Films 445, 224–228 (2003)

    Article  CAS  Google Scholar 

  8. J.H. Kim, J.H. Lee, Y.W. Heo, J.J. Kim, J.O. Park, J. Electroceram. 23, 169–174 (2009)

    Article  CAS  Google Scholar 

  9. J.H. Park, S.C. Lee, P.K. Song, Met. Mater. Int. 13(6), 475–478 (2007)

    Article  CAS  Google Scholar 

  10. S.M. Kim, Y.S. Rim, M.J. Keum, K.H. Kim, J. Electroceram. 23, 341–345 (2009)

    Article  CAS  Google Scholar 

  11. X. Chen, H. Zhang, T. Wang, F. Wang, W. Shi, Phys. Status Solidi A 209, 1456–1460 (2012)

    Article  CAS  Google Scholar 

  12. A. Gheidari, F. Behafarid, G. Kavei, M. Kazemzad, Mater. Sci. Eng. B 136, 37–40 (2007)

    Article  CAS  Google Scholar 

  13. N. Manavizadeh, F. Boroumand, E. Asl-Soleimani, F. Raissi, S. Bagherzadeh, A. Khodayari et al., Thin Solid Films 517, 2324–2327 (2009)

    Article  CAS  Google Scholar 

  14. L. Kerkache, A. Layadi, E. Dogheche, D. Remiens, J. Phys. D Appl. Phys. 39, 184–189 (2006)

    Article  CAS  Google Scholar 

  15. G.S. Zhu, L. Zhi, H.J. Yang, H.R. Xu, A.B. Yu, J. Electron. Mater. 41, 2376–2379 (2012)

    Article  CAS  Google Scholar 

Download references

Acknowledgments

This work is sponsored by the National Natural Science Foundation of China (Grant Nos. 21176051 and 61166008), the Key Project of Chinese Ministry of Education (No. 211141), Guangxi Natural Science Foundation (2012GXNSFFA060002 and 2013GXNSFBA019234) and Guangxi Key Laboratory of Information Materials Foundation (1110908-05-K) and Guangxi Experiment Center of Information Science, Guilin University of Electronic Technology (20130322).

Author information

Authors and Affiliations

  1. School of Materials Science and Engineering, Shaanxi Normal University, Xian, 710062, People’s Republic of China

    Guisheng Zhu & Zupei Yang

  2. Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin, 541004, People’s Republic of China

    Guisheng Zhu

Authors
  1. Guisheng Zhu
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Zupei Yang
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Guisheng Zhu.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Zhu, G., Yang, Z. Effect of sputtering power and annealing temperature on the properties of indium tin oxide thin films prepared from radio frequency sputtering using powder target. J Mater Sci: Mater Electron 24, 3646–3651 (2013). https://doi.org/10.1007/s10854-013-1298-8

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10854-013-1298-8

Keywords

Search

Navigation