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Structural and optical properties of Cu2SnS3 and Cu3SnS4 thin films by successive ionic layer adsorption and reaction

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Abstract

Thin films of Cu2SnS3 and Cu3SnS4 were obtained by sulfurizing (Cu, Sn)S structured precursors prepared by successive ionic layer absorption and reaction method. The results of energy dispersive spectroscopy (EDS) indicate that some loss in Sn with increasing sulfurization temperature. For the sulfurization temperatures of 380, 400 and 500 °C, tetragonal (I-42m) Cu2SnS3, cubic (F-43m) Cu2SnS3 and tetragonal (I-42m) Cu3SnS4 were formed, respectively. The combination of X-ray diffraction (XRD) results and Raman spectroscopy reveals that there are small Cu2−x S phase existing in the CTS thin films (400 and 500 °C). Scanning electron microscopy was used to study the morphology of the layers. The ternary compounds present a high optical absorption coefficient (>104 cm−1). The band gap energy (E g ) of the CTS thin films is estimated by reflection spectroscopy. The ternary compounds present a high optical absorption coefficient (>104 cm−1). The estimated band gap energy (E g ) is 1.05 eV for tetragonal (I-42m) Cu2SnS3, 1.19 eV for cubic (F-43m) Cu2SnS3, and 1.22 eV for tetragonal (I-42m) Cu3SnS4.

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Acknowledgments

This research is financial supported by National Science Foundation of China (61176062), the Priority Academic Program Development of Jiangsu Higher Education Institutions,Funding of Jiangsu Innovation Program for Graduate Education (CXLX12_0146) and the Fundamental Research Funds for the Central Universities.

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Authors and Affiliations

  1. College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, 29 Yudao Street, Nanjing, 210016, People’s Republic of China

    Hao Guan, Honglie Shen, Chao Gao & Xiancong He

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  1. Hao Guan
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  2. Honglie Shen
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  3. Chao Gao
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  4. Xiancong He
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Correspondence to Honglie Shen.

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Guan, H., Shen, H., Gao, C. et al. Structural and optical properties of Cu2SnS3 and Cu3SnS4 thin films by successive ionic layer adsorption and reaction. J Mater Sci: Mater Electron 24, 1490–1494 (2013). https://doi.org/10.1007/s10854-012-0960-x

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  • DOI: https://doi.org/10.1007/s10854-012-0960-x

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