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Effect of alloy composition on structural, optical and morphological properties and electrical characteristics of GaxIn1−xP/GaAs structure

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Abstract

The structural, optical and morphological properties of Ga-rich GaxIn1−xP layers with various gallium compositions grown on epi-ready semi-insulating (100)-oriented GaAs substrates by using Molecular Beam Epitaxy technique are presented in this study. The GaxIn1−xP/GaAs structures (S1, S2 and S3) have been evaluated by means of high resolution X-ray diffraction, photoluminescence (PL) and atomic force microscopy measurements at room temperature. Experimental forward and reverse bias current–voltage (I–V) characteristics of structure S3 was investigated at room temperature due to its better characteristics when compared to the other two samples. The main electrical parameters such as ideality factor (n), barrier height (Φ b ) and series resistance (R s ) were extracted from forward bias I–V characteristics and Cheung’s function. In addition, Hall measurements were carried out as a function of temperature (30–300 K) and at a magnetic field of 0.4 T were presented for structure S3.

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Acknowledgments

This work is supported by Ministry of Development of Turkey (2011K120290) and by TUBITAK (110T333).

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Authors and Affiliations

  1. Department of Physics, Faculty of Science, Gazi University, 06500, Ankara, Turkey

    B. Kınacı, Y. Özen, K. Kızılkaya, T. Asar, S. Ş. Çetin, E. Boyalı, M. K. Öztürk, T. Memmedli & S. Özçelik

  2. Photonics Application and Research Center, Gazi University, 06500, Ankara, Turkey

    B. Kınacı, Y. Özen, K. Kızılkaya, T. Asar, S. Ş. Çetin, E. Boyalı, M. K. Öztürk, T. Memmedli & S. Özçelik

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  1. B. Kınacı
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Kınacı, B., Özen, Y., Kızılkaya, K. et al. Effect of alloy composition on structural, optical and morphological properties and electrical characteristics of GaxIn1−xP/GaAs structure. J Mater Sci: Mater Electron 24, 1375–1381 (2013). https://doi.org/10.1007/s10854-012-0937-9

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