Abstract.
High-quality, lattice-matched InGaP on exact (100) GaAs was successfully grown by molecular beam epitaxy with a GaP decomposition source. The ordering parameter (η) of the InGaP is investigated as a function of the growth temperature. η is as low as 0.22 and almost insensitive to the growth temperature below 460 °C. It increases abruptly around 475 °C and has a maximum value of 0.35 at ≈490 °C. Double crystal X-ray diffraction and a low-temperature photoluminescence spectrum reveal that the present growth method is robust and provides better quality InGaP compared to other state-of-the-art growth technologies.
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Received: 20 November 2000 / Accepted: 27 January 2001 / Published online: 21 March 2001
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Song, J., Kim, J. & Lee, Y. Growth of highly disordered InGaP on (100) GaAs by molecular beam epitaxy with a GaP decomposition source . Appl Phys A 72, 625–627 (2001). https://doi.org/10.1007/s003390100848
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DOI: https://doi.org/10.1007/s003390100848