Abstract
Ga doped ZnO films have been prepared by radio frequency magnetron sputtering at room temperature. The (002) preferential orientation is observed for all the films. In plane lattice parameters of the films are obtained by X-ray diffraction θ–2θ scan with the samples tilted 61.63°. Intrinsic compressive stress is observed parallel to the film surface, varying from 410 to 3,000 MPa. Electrical properties of the films show a great dependence on the stress. Carrier concentration and mobility are both improved as the intrinsic compressive stress is reduced which is greatly affected by adjusting the deposition pressure. Therefore, the electrical resistivity is optimized to be 1.8 × 10−3 Ω·cm for the film prepared at 8.0 Pa. In addition, the optical analysis reveals that the transmittance of the films is higher than 90 %. The band gap of the films increases from 3.11 to 3.38 eV with decreasing the stress due to the increase in the carrier concentration, which is related to Burstein–Moss effect.
Similar content being viewed by others
References
J.F. Wager, Science 300, 1245 (2003)
O. Nakagawara, Y. Kishimoto, H. Seto, Y. Koshido, Y. Yoshino, T. Makino, Appl. Phys. Lett. 89, 91904 (2006)
B. Houng, C.J. Huang, Surf. Coat. Technol. 201, 3188 (2006)
H. Kim, J.S. Horwitz, S.B. Qadri, D.B. Chrisey, Thin Solid Films 107, 420 (2002)
T. Yamada, A. Miyake, S. Kishimoto, H. Makino, N. Yamamoto, T. Yamamoto, Appl. Phys. Lett. 91, 51915 (2007)
K. Lin, Y. Chen, J. Sol–Gel Sci. Technol. 215, 51 (2009)
S. Park, T. Ikegami, K. Ebihara, Thin Solid Films 513, 90 (2006)
H. Hsu, C. Yang, C. Huang, C. Hsu, J. Mater. Sci.: Mater. Electron. (2012). doi: 10.1007/s10854-012-0735-4
H.H. Shin, Y.H. Joung, S.J. Kang, J. Mater. Sci.: Mater. Electron. 20, 704(2009)
B. Lee, T. Kim, S. Jeong, J. Phys. D Appl. Phys. 39, 957 (2006)
V. Assuncao, E. Fortunato, A. Marques, H. Aguas, I. Ferreira, M.E.V. Costa, R. Martins, Thin Solid Films 427, 401 (2003)
Q. Ma, Z. Ye, H. He, J. Wang, Vacuum 82, 9 (2008)
M. Birkholz, B. Selle, F. Fenske, W. Fuhs, Phys. Rev. B: Condens. Matter 68, 205414 (2003)
L. Qiao, X. Bi, Appl. Phys. Lett. 92, 62912 (2008)
E. Chason, B.W. Sheldon, L.B. Freund, J.A. Floro, S.J. Hearne, Phys. Rev. Lett. 88, 156103 (2002)
R. Cebulla, R. Wendt, K. Ellmer, J. Appl. Phys. 83, 1087 (1998)
K. Ellmer, J. Phys. D Appl. Phys. 33, R17 (2000)
O. Kluth, G. Schope, B. Rech, R. Menner, M. Oertel, K. Orgassa, H.W. Schock, Thin Solid Films 502, 311 (2006)
J. Lee, J. Electroceram. 23, 521 (2009)
C. Agashe, O. Kluth, J. Kupkes, U. Zastrow, B. Rech, J. Appl. Phys. 95, 1911 (2004)
Y. Igasaki, H. Kanma, Appl. Surf. Sci. 169–170, 508 (2001)
R.J.D. Tilley, Crystals and crystal structures (John Wiley & Sons, Chichester, 2006), p. 113
G. Hu, X. Cai, Y. Rong, Fundamentals of materials science (Shanghai Jiao Tong University Press, Shanghai, 2007), p. 26
A. Segmuller, M. Murakami, R. Rosenberg, Analytical techniques for thin films (Academic, Boston, 1988), p. 143
D.M. Mattox, J. Vac. Sci. Technol., A 7, 1105 (1989)
C. Jacoboni, Theory of electron transport in semiconductors (Springer, Berlin, 2010), p. 140
P.Y. Yu, M. Cardona, Fundamentals of semiconductors (Springer, Berlin, 2010), p. 208
D.H. Zhang, H.L. Ma, Appl. Phys. A 62, 487 (1996)
M. De Graef, M.E. McHenry, Structure of materials (Cambridge University Press, Cambridge, 2007), p. 619
Y. Igasaki, H. Saito, J. Appl. Phys. 70, 3613 (1991)
S. Dutta, S. Chattopadhyay, A. Sarkar, M. Chakrabarti, D. Sanyal, D. Jana, Prog. Mater Sci. 54, 89 (2009)
X. Yu, J. Ma, F. Ji, Y. Wang, C. Cheng, H. Ma, Appl. Surf. Sci. 245, 310 (2005)
L. Hao, X. Diao, H. Xu, B. Gu, T. Wang, Appl. Surf. Sci. 254, 3504 (2008)
C. Fournier, O. Bamiduro, H. Mustafa, R. Mundle, R.B. Konda, F. Williams, A.K. Pradhan, Semicond. Sci. Technol. 23, 85019 (2008)
L. Chen, X. Bi, Vacuum 82, 1216 (2008)
T.J, G.R, V.A, Physica Status Solidi A15, 627(1966)
E. Burstein, Phys. Rev. 93, 632 (1954)
M. Snure, A. Tiwari, J. Appl. Phys. 101, 124912 (2007)
J.G. Lu, S. Fujita, T. Kawaharamura, H. Nishinaka, Y. Kamada, T. Ohshima, Z.Z. Ye, Y.J. Zeng, Y.Z. Zhang, L.P. Zhu, et al., J. Appl. Phys. 101, 83705(2007)
Acknowledgments
This work was supported by the Science Fund for Creative Research Groups (50921003).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Li, Y., Huang, Q. & Bi, X. Stress dependent properties of Ga-doped ZnO thin films prepared by magnetron sputtering. J Mater Sci: Mater Electron 24, 79–84 (2013). https://doi.org/10.1007/s10854-012-0862-y
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10854-012-0862-y