Abstract
The doping content of Mg plays an important role in the crystalline structure and morphology properties of Zn1-x Mg x O thin films. Here, using radio-frequency magnetron sputtering method, we prepared Zn1-x Mg x O thin films on single crystalline Si(100) substrates with a series of x values. By means of X-ray diffraction (XRD) and scanning electron microscope (SEM), the crystalline structure and morphology of Zn1-x Mg x O thin films with different x values are investigated. The crystalline structure of Zn1-x Mg x O thin film is single phase with x<0.3, while there is phase separation phenomenon with x>0.3, and hexagonal and cubic structures will coexist in Zn1-x Mg x O thin films with higher x values. Especially with lower x values, a shoulder peak of 35.1° appearing in the XRD pattern indicates a double-crystalline structure of Zn1-x Mg x O thin film. The crystalline quality has been improved and the inner stress has been released, after the Zn1-x Mg x O thin films were annealed at 600 °C in vacuum condition.
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This work has been supported by the National Natural Science Foundation of China (Nos.20473077 and 61540071), the Project of Natural Science Research of High Education in Jiangsu Province (No.15KJD140002), the Fundamental Research Funds of Changzhou Science and Technology Bureau (No.CJ20160026), the Changzhou Modern Optoelectronic Technology Research Institute Funds (No.CZGY13), and the Natural Science Funds of Changzhou Institute of Technology (No.YN1408).
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Du, Wh., Yang, Jj., Zhao, Y. et al. Effects of Mg doping content and annealing temperature on the structural properties of Zn1-x Mg x O thin films prepared by radio-frequency magnetron sputtering. Optoelectron. Lett. 13, 42–44 (2017). https://doi.org/10.1007/s11801-017-6204-9
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DOI: https://doi.org/10.1007/s11801-017-6204-9