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Varistor characteristics of vanadium oxide-doped zinc oxide ceramics modified with bismuth oxide

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Abstract

The effect of Bi2O3 on microstructure, electrical properties, dielectric characteristics, and aging behavior vanadium oxide-doped zinc oxide varistor ceramics was systematically investigated. Analysis of the phase indicated that the ceramics modified with Bi2O3 consisted of ZnO grain as a main phase and a few secondary phases such as Zn3(VO4)2, ZnV2O4, BiVO4, V2O5, and Mn-rich phase. The average grain size increased from 5.6 to 7.2 μm and the sintered density decreased in the range of 5.51–5.37 g/cm3 up to 0.05 mol%, whereas a further addition increased it to 5.40 g/cm3 at 0.25 mol%. The breakdown field decreased from 4,874 to 2,205 V/cm with an increase in the amount of Bi2O3. The ceramics added with 0.025 mol% Bi2O3 were characterized by a surprisingly high nonlinear coefficient (60) and very low leakage current density (20 μA/cm2). Bi atoms in the bulk acted as a donor to increase the electron concentration with an increase in the amount of Bi2O3.

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  1. Semiconductor Ceramics Laboratory, Department of Electrical Engineering, Dongeui University, Busan, 614-714, Korea

    Choon-W. Nahm

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  1. Choon-W. Nahm
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Correspondence to Choon-W. Nahm.

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Nahm, CW. Varistor characteristics of vanadium oxide-doped zinc oxide ceramics modified with bismuth oxide. J Mater Sci: Mater Electron 24, 70–78 (2013). https://doi.org/10.1007/s10854-012-0853-z

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  • DOI: https://doi.org/10.1007/s10854-012-0853-z

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