Abstract
Polycrystalline thin film II–VI compound semiconductors of cadmium sulfide (CdS) and cadmium telluride (CdTe) are the leading materials for the development of cost effective and reliable photovoltaic systems. The two important properties of these materials are its nearness to the ideal band gap for photovoltaic conversion efficiency and they have high optical absorption coefficients. Usually thin film solar cells are made by hetero-junction of p-type CdTe with n-type CdS partner window layer. In this article, we have deposited CdTe films on mica substrates using thermal evaporation technique and CdTe/CdS junction were developed by depositing a thin layer of CdS on to the CdTe substrate from chemical bath deposition method. The device was characterized by current voltage and photocurrent spectroscopy technique prior to the deposition of the transparent conducting layer. The devices were annealed in air at different temperatures and found that the device annealed at 673 K had better photovoltaic parameters. The efficiency of a typical device under 50 mW cm−2 illumination was estimated as 4%.
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Rajendra, B.V., Kekuda, D. Flexible cadmium telluride/cadmium sulphide thin film solar cells on mica substrate. J Mater Sci: Mater Electron 23, 1805–1808 (2012). https://doi.org/10.1007/s10854-012-0666-0
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DOI: https://doi.org/10.1007/s10854-012-0666-0