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High-speed preparation and dielectric properties of BaTi4O9 film by laser chemical vapor deposition

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Abstract

BaTi4O9 film was prepared on Pt/Ti/SiO2/Si substrate by laser chemical vapor deposition. The microstructure and dielectric properties were investigated. The single-phase BaTi4O9 film with random orientation was obtained. The surface consisted of round and rectangular grains, and the cross-section was columnar microstructure. The deposition rate (R dep) was 135 μm h−1. The dielectric constant (ε r) and loss (tanδ) were 35 and 0.01, respectively, at 1 MHz. With increasing temperature, ε r increased and showed a broad peak around 736 K, which indicated there might be a phase transition.

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Acknowledgments

This work was supported in part by Global COE Program of the Materials Integration, Tohoku University, and by the International Science and Technology Cooperation Program of China (Grant No. 2009DFB50470).

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Authors and Affiliations

  1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, and School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, China

    Dongyun Guo, Chuanbin Wang, Qiang Shen & Lianmeng Zhang

  2. Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan

    Dongyun Guo & Takashi Goto

Authors
  1. Dongyun Guo
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  2. Takashi Goto
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  3. Chuanbin Wang
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  4. Qiang Shen
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  5. Lianmeng Zhang
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Correspondence to Dongyun Guo.

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Guo, D., Goto, T., Wang, C. et al. High-speed preparation and dielectric properties of BaTi4O9 film by laser chemical vapor deposition. J Mater Sci: Mater Electron 23, 897–900 (2012). https://doi.org/10.1007/s10854-011-0517-4

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  • DOI: https://doi.org/10.1007/s10854-011-0517-4

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