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Enhancement of thermal conductivity of hydrogenated silicon film by microcrystalline structure growth

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Abstract

Hydrogenated silicon film is fabricated by plasma enhanced chemical vapor deposition method, and the enhancement of thermal conductivity of hydrogenated silicon film by microcrystalline structure growth is investigated. The thermal conductivity of films is measured based on Fourier thermal transmitting law by using platinum electrode. Raman spectroscopy characterization reveals the crystalline volume fraction (X c) of microcrystalline silicon (μc-Si:H) and demonstrates it is embedded with nanocrystals. Spectroscopic ellipsometry with Forouhi–Bloomer model is used to obtain the thickness of films. The measurement results show that the thermal conductivity of μc-Si:H is much higher than amorphous silicon (a-Si:H).

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References

  1. H.S. Yang, D.G. Cahill, X. Liu, J.L. Feldman, R.S. Crandall, B.A. Sperling, J.R. Abelson, Phys. Rev. B 81, 104203 (2010)

    Article  Google Scholar 

  2. M.N. van den Donker, B. Rech, W.M.M. Kessels, M.C.M. van de Sanden, New J. Phys. 9, 280 (2007)

    Article  Google Scholar 

  3. X. Liu, J.L. Feldman, D.G. Cahill, R.S. Crandall, N. Bernstein, D.M. Photiadis, M.J. Mehl, D.A. Papaconstantopoulos, Phys. Rev. Lett. 102, 035901 (2009)

    Article  Google Scholar 

  4. I. Steinbach, M. Apel, Mater. Sci. Eng.: A 449–451, 95 (2005)

    Google Scholar 

  5. C. Calaza, N. Viarani, G. Pedretti, M. Gottardi, A. Simoni, V. Zanini, M. Zen, Sens Actuators A 132, 129 (2006)

    Article  Google Scholar 

  6. M. Moreno, A. Kosarev, A. Torres, R. Ambrosio, Thin Solid Films 515, 7607 (2007)

    Article  CAS  Google Scholar 

  7. A.H.Z. Ahmed, R.N. Tait, IEEE Trans. Electron Devices 52, 1900 (2005)

    Article  CAS  Google Scholar 

  8. W.M. Goubau, R.A. Tait, Phys. Rev. Lett. 34, 1220 (1975)

    Article  CAS  Google Scholar 

  9. I. Hatta, Y. Suga, R. Kato, A. Maesono, Rev. Sci. Instru. 56, 1643 (1985)

    Article  CAS  Google Scholar 

  10. J. Alvarez-Quintana, J. Rodríguez-Viejo, Sens Actuators A 142, 232 (2008)

    Article  Google Scholar 

  11. A. Syed, L. Romy, W. Thomas, L. Michael, Z. Ronny, F. Charlee, G. Tim, A. Jes, S. Thomas, Diam. Relat. Mater. 15, 389 (2006)

    Article  Google Scholar 

  12. S.B. Li, Z.M. Wu, Y. Kai, N.M. Liao, W. Li, Y.D. Jiang, Acta Physica Sinica 57, 3126 (2008)

    CAS  Google Scholar 

  13. N. Attaf, M.S. Aida, L. Hadjeris, Solid State Commun. 120, 525 (2001)

    Article  CAS  Google Scholar 

  14. G. Viera, S. Huet, L. Boufendi, J. Appl. Phys. 90, 4175 (2001)

    Article  CAS  Google Scholar 

  15. S.B. Li, Z.M. Wu, Y.D. Jiang, W. Li, N.M. Liao, J.S. Yu, Nanotechnology 19, 085706 (2008)

    Article  CAS  Google Scholar 

  16. Q.L. Song, Z. Cui, S.H. Xia, Z.F. Chen, J.G. Zhang, Sens Actuators A 112, 122 (2004)

    Article  Google Scholar 

  17. S. Logothedis, G. Kiriokidis, E.C. Paloura, J. Appl. Phys. 70, 2791 (1991)

    Article  Google Scholar 

  18. S. Sriraman, S. Agarwal, E.S. Aydil, D. Maroudas, Nature 418, 62 (2002)

    Article  CAS  Google Scholar 

  19. J.J. Boland, G.N. Parson, Science 256, 1304 (1992)

    Article  CAS  Google Scholar 

  20. I. Kaiser, N.H. Nickel, W. Fuhs, W. Pilz, Phys. Rev. B 58, R1718 (1998)

    Article  CAS  Google Scholar 

Download references

Acknowledgments

This work was partially supported by National Science Foundation of China via grant No. 60425101 and No. 60901034.

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Authors and Affiliations

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, People’s Republic of China

    Shibin Li, Yadong Jiang, Zhiming Wu & Wei Li

  2. Arkansas Institute for Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA

    Shibin Li, Jiang Wu, Zhiming Wang & Gregory J. Salamo

  3. Department of Electronics and Information, Hang Zhou Dianzi University, Hangzhou, 310018, China

    Zhihua Ying

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  1. Shibin Li
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  2. Yadong Jiang
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  3. Zhiming Wu
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  4. Jiang Wu
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  5. Zhihua Ying
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  6. Zhiming Wang
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  7. Wei Li
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  8. Gregory J. Salamo
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Correspondence to Zhiming Wu or Zhiming Wang.

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Li, S., Jiang, Y., Wu, Z. et al. Enhancement of thermal conductivity of hydrogenated silicon film by microcrystalline structure growth. J Mater Sci: Mater Electron 23, 224–228 (2012). https://doi.org/10.1007/s10854-011-0390-1

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  • DOI: https://doi.org/10.1007/s10854-011-0390-1

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