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Dielectric property and electrical conduction mechanism of ZrO2–TiO2 composite thin films

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Abstract

ZrO2–TiO2 composite films were fabricated by radio frequency magnetron sputtering and post annealing in O2. It was found the films remained amorphous below the annealing temperature of 500 °C. The as-deposited ZrO2–TiO2 film has a high dielectric constant of 22, and which increases to 34 after annealing at 400 °C. At low electric field, the dominant conduction mechanisms are Schottky emission for both the as-deposited and the annealed thin films. At high electric field, the conduction mechanism changes to space-charge-limited current and then changes to Poole–Frenkel (PF) emission after annealing at 400 °C.

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Acknowledgments

This work is supported in partial by the National Nature Science Foundation of China (No. 51072049), MOST of China (No.2007CB936202), STD and ED of Hubei Province (Grant Nos. 2009CDA035, 2008BAB010, and Z20091001).

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Authors and Affiliations

  1. State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi’an Jiaotong University, 710049, Xi’an, Shanxi, China

    Ming Dong

  2. Faculty of Physics and Electronic Technology, Hubei University, 430062, Wuhan, China

    Hao Wang, Liangping Shen, Yun Ye, Cong Ye, Yi Wang & Jun Zhang

  3. College of Electrical and Electronic Engineering, Huazhong University of Science and Technology, 430074, Wuhan, China

    Liangping Shen

  4. School of Materials Science and Engineering, University of Science and Technology Beijing, 100083, Beijing, China

    Yong Jiang

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  1. Ming Dong
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  5. Cong Ye
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Correspondence to Hao Wang.

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Dong, M., Wang, H., Shen, L. et al. Dielectric property and electrical conduction mechanism of ZrO2–TiO2 composite thin films. J Mater Sci: Mater Electron 23, 174–179 (2012). https://doi.org/10.1007/s10854-011-0378-x

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  • DOI: https://doi.org/10.1007/s10854-011-0378-x

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