Abstract
The synthesis of semiconductor nanowires is more and more interested to the applications for building blocks of the innovative nano-sized devices and circuits, but the research and fabrication of these nanowires are also holding a number of difficulties and challenges. Among many different kinds of semiconductor nanowires, Ga2O3 is increasingly grown for many promising applications in nano-device production, namely nanowire LED and Laser. So far there are many synthesizing methods of semiconductor nanowires, among them the vapor–liquid–solid (VLS) method is simple, cheap and popular. However, when we use the VLS method for nanowire growth, various technological problems exist. This paper aims at investigating some influences of the growth technological conditions and Au metal catalyst on the morphology of Ga2O3 nanowire grown by VLS on GaAs substrate. The main considering factors include the different growing temperatures and times, the effects of Au diffusion, Au droplets formation, Au cluster islands formation, and gas volume of the growing tube/ampoule at the 10−1 torr low air pressure. The obtained experimental results regarding the structural properties of nanowires under these effects investigated by scanning electron microscopy, field emission scanning electron microscopy, high angle annular dark field and bright field, scanning transmission electron microscopy, energy-dispersive X-ray techniques, and focus ion beam are presented and discussed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
M.J. Patently, Nano materials—the driving force. Nanotoday 7(12), 20 (2004)
R.S. Wonders, Nanosci. Eng. Technol. (NSET) 1 (2002)
B. Bhushan, Handbook of Nanotechnology Part A (Springer) 99 (2004)
P. Yang, Y. Wu, R. Fan, Int. J. Nanosci. 1(1), 1 (2002)
L.J. Lauhon, M.S. Gudiksen, C.M. Lieber, Phil. Trans. R Soc. Lond. A 362, 1247 (2004)
Y. Huang, X. Duan, Y. Cui, C.M. Lieber, Nano Lett. 2(2), 101 (2002)
A.B. Greytak, L.J. Lauhon, M.S. Gudiksen, C.M. Lieber, Appl. Phys. Lett. 84, 24 (2004)
M.Z. Atashbar, M.-F. Yu, X. Chen, Investigation and characterization of Ga2O3 nanowire for gas sensing applications. IEEE Sensors (2002)
P.A. Tuan, D.K. An, D.H. Manh, P.V. Phong, L.T. Hoa, in Proceedings of the 5th National Solid State conference, Vietnam, p. 359 (2007)
P.H. Trang, P.V. Vuong, P.V. Phong, N.H. Manh, D.K. An, in Proceedings of the APCTP–ASEAN workshop on advanced materials science and nanotechnology (Nha Trang, Vietnam) p. 975 (2008)
C.N.R. Rao, F.L. Deepak, G. Gundiah, A. Govindaraj, Inorganicnanowires. Prog. Solid State Chem. 31, 5–147 (2003). www.elsevier.nl/locate/pssc
B. Bhushan, Semiconductoring nanowires & nanorods: synthesis, properties & applications, Handbook of nanotechnology (Springer, 2004), 4. nanowires, pp. 99–144
I. Mojzes, S. Kokényesi, I.A. Szabó, I. Ivan, B. Pécz, Nanopages 1, 85 (2006)
A. Hemant, M.F. Ann, A.G. Irene, E.D.C. Christopher, C. Paul, ACS Nano. 1(5), 415 (2007)
Synthesis and characterization of nanowires, Roger Prasad MatE 297 and Dr. Zhu Guo, pp. 1–9
Y. Civale, L.K. Nanver, P. Hadley, Aspects of silicon nanowire synthesis by aluminium-catalyzed vapour-liquid-solid mechanism, in Proceedings of 7th annual workshop on semiconductor advances for future electronics and sensors (Veldhoven, The Netherlands), pp. 692–696 (2004)
J. Noborisaka, J. Motohisa, S. Hara, T. Fukui, Appl. Phys. Lett. 87, 093109 (2005)
J.G. Wen, J.Y. Lao, D.Z. Wang, T.M. Kyaw, Y.L. Foo, Z.F. Ren, Chem. Phys. Lett. 372, 717 (2003)
B. Kalache, P.R. Cabarraocas, A.F. Morral, Jpn. J. Appl. Phys. 45, L190 (2006)
Y. Cui, Z. Zhaohui, D. Wang, W.U. Wang, C.M. Lieber, High performance silicon nanowire Field Effect Transistor. Nano Lett. 3(2), 149–152 (2003)
Micro & Nanoelectronics Technology, ed. by D.K. An, in Vietnam Education Publication House (HaNoi, 2009), chapter 12, pp. 479–536; chapter 13, pp. 537–602
J. Kim, Nanodevices by using semiconductor nanowires, University of Texas at Austin, TX, pp. 1–11 (2004)
J.B. Hanno, S. Kodambaka, F.M. Ross, R.M. Tromp, The influence of the surface migration of Gold on the growth of silicon nanowires. Nat. Lett. 440, 574 (2006). doi:10.1038/nature. pp. 69–71
M.A. Verheijen, G. Immink, T. de Smet, M.T. Borgstrom, E.P. Bakkers, Growth kinetics of heterostructured GaP-GaAs nanowires. J. Am. Chem. Soc. 128, 1353 (2006)
D.K. An, N.X. Chung, P.A. Tuan, in Proceedings of the APCTP–ASEAN workshop on advanced materials science and nanotechnology (Nha Trang, Vietnam), p. 518 (2008)
J. Noborisaka, J. Motohisa, S. Hara, T. Fukui, Appl. Phys. Lett. 87, 093109 (2005)
X. Duan, J. Wang, C.M. Lieber, Synthesis and optical properties of Galium arsenide nanowires. Appl. Phys. Lett. 76(9), 1116–1118 (2000)
K. Watanabe, E. Asano, T. Yamazaki, Y. Kikuchi, I. Hashimoto, Symmetries in BF and HAADF STEM image calculations, Tokyo Metropolitan College of Technology, Tokyo 140-0011, Japan
Binary Phase Diagram, vol. 1. ed. by T.B. Massalki, in American society for metals (Metal park, Ohio, 1986)
E.I. Givargizov, J. Cryst. 31, 20–30 (1975)
S. Sharma, M.K. Sunkara, R. Miranda, G. Lian, E.C. Dickey, A novel low temperature synthesis method for semiconductor nanowires (AMSCL). MRS spring meeting, April 17, (2001)
Acknowledgments
The authors would like to express their gratitude to the Institute of Materials Science, VAST for funding the basic research project in 2008 and 2009 to carry out these experiments.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Dao, K.A., Phan, A.T., Do, H.M. et al. The influences of technological conditions and Au cluster islands on morphology of Ga2O3 nanowires grown by VLS method on GaAs substrate. J Mater Sci: Mater Electron 22, 204–216 (2011). https://doi.org/10.1007/s10854-010-0115-x
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10854-010-0115-x