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Oxidation of sputtered Zr thin film on Si substrate

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Abstract

Oxidation of sputtered Zr thin film on Si substrate has been investigated by varying oxidation times (5–60 min) at 500 °C. Fourier transform infrared spectroscopy indicated the existence of ZrO2 by showing spectra of Zr–O. Vibration mode of Si–O and Zr–O–Si are also detected for all samples oxidized at different duration. This suggested the existence of SiO x and Zr x Si y O z compounds and they might be located at interfacial layers (ILs) between ZrO2 and Si. Cross-sectional image of high resolution transmission electron microscopy taken from 60-min oxidized sample showed that both ZrO2 and IL thickness is ~3.5 nm. Time-of-flight secondary-ion-mass spectroscopy suggested that Zr x Si y O z may be formed after oxidized for 15 min. The proposed IL is consisted of a mixture of Zr x Si y O z and SiO x . A physical model has been established to explain the observation. Electrical characterization shows that capacitance–voltage curves have small hysteresis and their flatband voltages are shifted to a negative bias. Effective dielectric constant values of the investigated oxides are in the range of 4.22–5.29. Leakage current density–breakdown voltage characteristic shows that 5-min oxidized sample has the lowest dielectric breakdown voltage if compared with the other samples.

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Acknowledgment

This work was supported by the AUN/SEED-Net Project (Grant No. 6050128) and eScienceFund (6013370).

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Authors and Affiliations

  1. Energy Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Nibong Tebal, 14300, Pulau Pinang, Malaysia

    Tedi Kurniawan, Kuan Yew Cheong, Khairunisak Abdul Razak & Zainovia Lockman

  2. Faculty of Industrial Technology, Institute of Technology Bandung, Labtek VI, Jl.Ganehsa No.10, Bandung, 40132, Indonesia

    Nuruddin Ahmad

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  1. Tedi Kurniawan
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  2. Kuan Yew Cheong
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Correspondence to Kuan Yew Cheong.

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Kurniawan, T., Cheong, K.Y., Razak, K.A. et al. Oxidation of sputtered Zr thin film on Si substrate. J Mater Sci: Mater Electron 22, 143–150 (2011). https://doi.org/10.1007/s10854-010-0103-1

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  • DOI: https://doi.org/10.1007/s10854-010-0103-1

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