Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates

Abstract

Hafnium oxide films have been deposited at 250 °C on silicon and germanium substrates by atomic layer deposition (ALD), using tetrakis-ethylmethylamino hafnium (TEMAH) and water vapour as precursors in a modified Oxford Instruments PECVD system. Self-limiting monolayer growth has been verified, characterised by a growth rate of 0.082 nm/cycle. Layer uniformity is approximately within ±1% of the mean value. MOS capacitors have been fabricated by evaporating aluminium electrodes. CV analysis has been used to determine the bulk and interface properties of the HfO₂, and their dependence on pre-clean schedule, deposition conditions and post-deposition annealing. The dielectric constant of the HfO₂ is typically 18. On silicon, best results are obtained when the HfO₂ is deposited on a chemically oxidised hydrophilic surface. On germanium, best results are obtained when the substrate is nitrided before HfO₂ deposition, using an in-situ nitrogen plasma treatment.