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Modified thermoelectric figure of merit estimated from enhanced mobility of [100] oriented beta-FeSi2 thin film

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Abstract

The modification of thermoelectric figure of merit was estimated from enhanced mobility of [100] oriented beta-FeSi2 film. beta-FeSi2 on Si(001) substrate was prepared by molecular beam epitaxy method using an Fe source. The crystallographic orientation of beta-FeSi2 film on Si(001) substrate was characterized by using X-ray diffraction. Using scanning electron microscopy, surface morphology and film thickness of samples were observed and estimated, respectively. The mobility of beta-FeS2 film on Si(001) substrate were also characterized by Hall measurement at room temperature. A part of the enhancement of figure of merit was evaluated as the functions of mobility and crystallographic orientation of samples.

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Acknowledgments

Author would like to thank A .Obara for technical supports. The study was supported by Sumitomo foundation for basic science, Venture Business Laboratory foundation (Tokyo Tech.) and Nippon Sheet Glass foundation for materials science and engineering.

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Authors and Affiliations

  1. Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo, 152-8552, Japan

    Hirofumi Kakemoto, Satoshi Wada & Takaaki Tsurumi

  2. Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo, 162-8601, Japan

    Tohru Higuchi

  3. National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, Tsukuba, 305-8568, Japan

    Hajime Shibata

Authors
  1. Hirofumi Kakemoto
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  2. Tohru Higuchi
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  3. Hajime Shibata
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  4. Satoshi Wada
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  5. Takaaki Tsurumi
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Correspondence to Hirofumi Kakemoto.

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Kakemoto, H., Higuchi, T., Shibata, H. et al. Modified thermoelectric figure of merit estimated from enhanced mobility of [100] oriented beta-FeSi2 thin film. J Mater Sci: Mater Electron 19, 311–314 (2008). https://doi.org/10.1007/s10854-007-9335-0

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  • DOI: https://doi.org/10.1007/s10854-007-9335-0

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