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Modeling vacancy injection from the silicon/silicon-nitride interface

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Abstract

Vacancy injection is known to occur from the silicon/silicon-nitride interface under conditions of thermal nitridation and during anneal in inert or oxidizing ambients in the presence of a pre-deposited silicon nitride film. We present a semi-empirical model for the injection flux. We suggest that there are two components to the injection: a rapidly decaying component that is proportional to the growth rate of the nitride film and a slowly decaying component that continues after the film thickness has saturated. Both fluxes involve diffusion of the silicon cation into the nitride film but silicon diffusion is the rate limiting step only in the case of the second component.

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Notes

  1. Note that in the actual paper Hayafuji et al. have an error of a factor of 2 in the calculations on p. 2107 of Ref. [15] so that their numbers would yield an apparent activation energy of 2.06 eV.

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Acknowledgments

The authors gratefully acknowledge the support of ISE, now part of Synopsys, Inc. in providing software and technical support for FLOOPS-ISE. This work was partly funded by a grant from the Natural Science and Engineering Research Council of Canada (NSERC).

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, McMaster University, 1280 Main Street W, Hamilton, ON, Canada, L8S 4K1

    Mohammad Hasanuzzaman & Yaser M. Haddara

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  1. Mohammad Hasanuzzaman
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  2. Yaser M. Haddara
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Correspondence to Yaser M. Haddara.

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Hasanuzzaman, M., Haddara, Y.M. Modeling vacancy injection from the silicon/silicon-nitride interface. J Mater Sci: Mater Electron 19, 323–326 (2008). https://doi.org/10.1007/s10854-007-9321-6

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