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Si/SiGe near-infrared photodetectors grown using low pressure chemical vapour deposition

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Abstract

Near-infrared photodetectors have been fabricated using standard CMOS processes in conjunction with the multilayer growth of Si/SiGe0.06 using low-pressure chemical vapor deposition (LPCVD). Cross-section scanning electron microscopy (SEM) indicates the existence of quantum dot like corrugations in devices with particularly thick SiGe 0.06 quantum wells. With an accumulation of germanium atoms at the crest of such features and commensurate high germanium concentration we see a considerable enhancement of the long wavelength detection sensitivity of photodetectors in the range 1100–1300 nm. By fitting experimental data the minimum energy gap of the structure is found to be 0.88 eV corresponding to a germanium concentration of around 15%.

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Authors and Affiliations

  1. Nanoscale Systems Integration, Electronics and Computer Science, University of Southampton, Southampton, SO17 1BJ, UK

    P. Iamraksa & D. M. Bagnall

  2. Innos Ltd, Millbrook Technology Campus, Southampton, SO15 0DJ, UK

    N. S. Lloyd

Authors
  1. P. Iamraksa
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  2. N. S. Lloyd
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  3. D. M. Bagnall
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Correspondence to P. Iamraksa.

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Iamraksa, P., Lloyd, N.S. & Bagnall, D.M. Si/SiGe near-infrared photodetectors grown using low pressure chemical vapour deposition. J Mater Sci: Mater Electron 19, 179–182 (2008). https://doi.org/10.1007/s10854-007-9299-0

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  • DOI: https://doi.org/10.1007/s10854-007-9299-0

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