Abstract
ZnO:Cu and ZnS thin films were grown by metal-organic chemical vapour deposition (MOCVD) under atmospheric pressure onto glass substrates. The ZnO:Ag films were fabricated from ZnS films by non-vacuum method that consists of simultaneous oxidation and Ag-doping by the close spaced evaporation (CSE) of silver at the temperature of 500–600 °C. Photo-assisted rapid thermal annealing (PARTA) at ambient air during 10–30 s at the temperature of 700–800 °C was used for the ZnO:Cu films. The samples were studied by X-ray diffraction technique (XRD), atomic force microscopy (AFM), and photoluminescence (PL) measurements. The grain size of ZnO:Cu films increased with an increase of Cu concentration. PL spectra of as-deposited ZnO:Cu films depended on Cu concentration and contained the bands typical for the copper. After PARTA at high temperature the emission maximum shifted towards the short-wave region. During the fabrication of ZnO:Ag films the grain growth process was strongly affected by the Ag loading level. The grain size increased with an increase of Ag concentration and ZnO:Ag films with surface roughness of 8 nm were obtained. Observed 385 nm PL peak for these samples can be attributed to the exciton–exciton emission that proves the high quality of the obtained ZnO:Ag films.
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References
D. Reynolds, D. Look, B. Jogai, Solid State Commun. 99, 873 (1996)
D. Bagnall, Y. Chen, M. Shen, Z. Zhu, T. Goto, T. Yao, Appl. Phys. Lett. 70, 2230 (1997)
T. Aoki, Y. Hatanaka, D. Look, Appl. Phys. Lett. 76, 3257 (2000)
K. Minegishi, Y. Koiwai, Y. Kikuchi, K. Yano, M. Kasuga, A. Shimizu, Jpn. J. Appl. Phys. 36, L1453 (1997)
A.H. Jayatissa, Semicond. Sci. Technol. 18, L27 (2003)
C. Bettencourt, E. Llobet, P. Ivanov, X. Vilanova, X. Correig, M.A.P. Silva, L.A.O. Nunes, J.J. Pireaux, J. Phys. D: Appl. Phys. 37, 3383 (2004)
Yu.V. Kopytko, Yu.A. Tzyrkunov, V.G. Verbizkii, A.V. Solonko, in Proceedings of the 5th SID Symposium on Advanced Display Technologies, Minsk, Belarus, September 1996, ed. by A.G. Smirnov (SPS “MicroVideoSystems”, Minsk, 1996) p. 86
L.F. Zhanorsky, L.V. Zavyalova, G.S. Svechnikov, Thin Solid Films 128, 241 (1985)
B.E. Warren, X-Rays Diffraction (Dover publications, INC, New York, 1990), p. 251
J.P. Enríquez, X. Mathew, J. Cryst. Growth 259, 215 (2003)
H.-Y. Lu, S.-Y. Chu, S.-S. Tan, J. Cryst. Growth 269, 385 (2004)
R. Dingle, Phys. Rev. Lett. 23, 579 (1969)
Z. Fang, Y. Wang, D. Xu, Y. Tan, X. Liu, Opt. Mater. 26, 239 (2004)
Y. Feng, Y. Zhou, Y. Liu, G. Zhang, X. Zhang, J. Luminescence 119–120, 239 (2004)
V.A. Nikitenko, M.M. Malov, P.G. Pasko, V.D. Chernuj, J. Appl. Spectrosc. 21, 835 (1974)
H.-M. Cheng, H.-C. Hsu, S.-L. Chen, W.-T. Wu, C.-C. Kao, L.-J. Lin, W.-F. Hsieh, J. Cryst. Growth 277(1–4), 192 (2005)
T. Hirai, Y. Harada, S. Hashimoto, T. Itoh, N. Ohno, J. Luminescence 112, 196 (2005)
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Kryshtab, T., Khomchenko, V.S., Khachatryan, V.B. et al. Effect of doping on properties of Zno:Cu and Zno:Ag thin films. J Mater Sci: Mater Electron 18, 1115–1118 (2007). https://doi.org/10.1007/s10854-007-9256-y
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DOI: https://doi.org/10.1007/s10854-007-9256-y