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The ferroelectric and optical properties of (Pb0.92La0.08)(Zr0.65Ti0.35)O3 thin films deposited by radio-frequency magnetron sputtering

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Abstract

Ferroelectric (Pb0.92La0.08)(Zr0.65Ti0.35)O3 (PLZT) films have been prepared on Pt/Ti/SiO2/Si and fused quartz substrates using radio-frequency (rf) magnetron sputtering at a deposition temperature of 650°C. X-ray diffraction analysis shows that the PLZT thin films on platinized silicon are polycrystalline with (100)-preferential orientation. A Al/PLZT/Pt capacitor has been fabricated and it shows that the films have excellent ferroelectric character, with saturation polarization (P s), remanent polarization (P r) and coercive field (E c) of 32.8μC/cm2, 24.3μC/cm2 and 142 kV/cm, respectively. The PLZT thin films exhibit good insulating property and the leakage current density of the films on platinized silicon is only about 0.86 × 10−7 A/cm2 at 200 kV/cm. By the optical transmission spectra measurements, the energy gap (E g) of the PLZT films on fused quartz is found to be about 3.54 eV. The optical constants (n and k) of the films in the wavelength range of 250–900 nm are obtained by a Filmetrics F20 reflectance spectrometer.

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Acknowledgements

The authors would like to acknowledge Professor L. F. Gao in the institute of Optics and Electronics Chinese Academy of Sciences for the optical transmission spectrum measruements and Dr. W. F. Qin for his fruitful discussions. This research is sponsored by a grant for State Key Program of China.

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Authors and Affiliations

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P.R. China

    Wenjian Leng, Chuanren Yang, Hong Ji, Jihua Zhang, Jinlong Tang & Hongwei Chen

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  1. Wenjian Leng
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  2. Chuanren Yang
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  3. Hong Ji
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  4. Jihua Zhang
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Correspondence to Wenjian Leng.

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Leng, W., Yang, C., Ji, H. et al. The ferroelectric and optical properties of (Pb0.92La0.08)(Zr0.65Ti0.35)O3 thin films deposited by radio-frequency magnetron sputtering. J Mater Sci: Mater Electron 17, 1041–1045 (2006). https://doi.org/10.1007/s10854-006-9005-7

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