Abstract
The Li, Ta, and Sb-substituted lead-free (K0.44Na0.52Li0.04)(Nb0.86Ta0.10Sb0.04)O3 (KNLNTS) thin films were fabricated on Pt(111)/TiO2/SiO2/Si substrates using the radio frequency (RF) magnetron sputtering method. The KNLNTS thin films were annealed at 750 ◦C for 1 h in an oxygen ambient. The film with a thickness of 350 nm exhibited a typical ferroelectric P − E hysteresis loop without fatigue even after 1010 pulses. The KNLNTS thin film exhibited a relatively low leakage current density of ~10 −7 A/cm2 even up to an applied electric field of 142 kV/cm. A well-saturated piezoelectric hysteresis loop was obtained with a piezoelectric coefficient d 33 of 21 pm/V.
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Kim, J.S., Ahn, C.W., Ullah, A. et al. Ferroelectric and electrical properties of lead-free (K0.44Na0.52Li0.04)(Nb0.86Ta0.10Sb0.04)O3 thin films. Journal of the Korean Physical Society 68, 1461–1466 (2016). https://doi.org/10.3938/jkps.68.1461
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DOI: https://doi.org/10.3938/jkps.68.1461