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Effect of diameter on I–V characteristics of template synthesized Cu–Se nano/micro structures

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Abstract

We have successfully fabricated arrays of Cu–Se nano/micro structures of varying diameters (40 nm, 100 nm, 1 μm, 2 μm) using a non-lithographic technique involving filling of pores of track-etch membranes (TEMs) with Cu and Se materials. The I–V curves of synthesized Cu–Se nano/micro structures of varying diameters were also recorded which show increase of negative differential resistance with decrease in diameters of these structures. A suitable explanation to this behaviour has also been presented.

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Acknowledgments

Thanks are due to Dr. Henri HENOT of Université catholique de Louvain, Belgium for providing PC track etch membranes of 40 nm and GSI, Darmstadt, Germany for providing irradiation facilities at UNILAC for producing other TEMs.

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Authors and Affiliations

  1. Department of Electronic Science, Kurukshetra University, Kurukshetra, 136119, India

    Meeru Chaudhri & A. Vohra

  2. Department of Applied Physics, National Institute of Technology (Deemed University), Kurukshetra, 136119, India

    S. K. Chakarvarti

Authors
  1. Meeru Chaudhri
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  2. A. Vohra
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  3. S. K. Chakarvarti
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Correspondence to Meeru Chaudhri.

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Chaudhri, M., Vohra, A. & Chakarvarti, S.K. Effect of diameter on I–V characteristics of template synthesized Cu–Se nano/micro structures. J Mater Sci: Mater Electron 17, 993–997 (2006). https://doi.org/10.1007/s10854-006-9000-z

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  • DOI: https://doi.org/10.1007/s10854-006-9000-z

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