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Dislocation of high quality P-doped ZnTe substrate examined by X-ray topography

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Abstract

Transmission X-ray topograph was successfully observed in a high quality P-doped ZnTe substrate (100). The dislocation density was estimated to be approximately 7000 cm−2. This value was smallest in the ZnTe substrate. Both peak energies in the photoluminescence spectra were the same in the dislocation and no-dislocation areas. However, the intensity of the free-to-acceptor emission in the dislocation area was larger than that in the no-dislocation area. It was found that the majority of the phosphor impurities existed in the dislocation areas.

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References

  1. Q. Wu, T. D. Hewitt and X.-C. Zhang, Appl. Phys. Lett. 69 (1996) 1026.

    Article  Google Scholar 

  2. Q. Wu and X.-C. Zhan, ibid. 71 (1997) 1285.

    Article  Google Scholar 

  3. K. Sato, M. Hanafusa, A. Noda, A. Arakawa, M. Uchida, T. Asahi and O. Oda, J. Cryst. Growth 214/215 (2000) 1080.

    Article  Google Scholar 

  4. K. Sato, T. Asahi, M. Hanafusa, A. Noda, A. Arakawa, M. Uchida, O. Oda, Y. Yamada and T. Taguchi, Phys. Stat. Sol. (a) 180 (2000) 267.

    Article  Google Scholar 

  5. K. Sato, Y. Seki, Y. Matsuda and O. Oda, J. Cryst. Growth 197 (1998) 413.

    Google Scholar 

  6. T. Asahi, A. Arakawa and K. Sato, ibid. 229 (2001) 74.

    Article  Google Scholar 

  7. A. Arakawa, T. Asahi and K. Sato, Phys. Stat. Sol. (b) 229 (2002) 11.

    Article  Google Scholar 

  8. K. Yoshino, M. Yoneta, T. Yabe, K. Ohmori, H. Saito and M. Ohishi, Physica B 340/342 (2003) 254.

    Google Scholar 

  9. H. P. Wanger, S. Lankes, K. Wolf, W. Kuhn, P. Link and W. Gwbhardt, J. Cryst. Growth 117 (1992) 290.

    Google Scholar 

  10. R. E. Nahory and H. Y. Fan, Phys. Rev. 156 (1957) 825.

    Article  Google Scholar 

  11. R. Bhargava, J. Cryst. Growth 59 (1982) 15.

    Article  Google Scholar 

  12. A. Ebina and T. Takahashi, ibid. 59 (1982) 432.

    Google Scholar 

  13. Y. P. Varshini, Physics 34 (1967) 149.

    Google Scholar 

  14. R. Passler, E. Griebl, H. Riepl, G. Lautner, S. Bauer, H. Preis, W. Gebhardt, B. Buda, D. J. As, D. Schikora. K. Lischka, K. Papagelis and S. Ves, J. Appl. Phys. 86 (1999) 4403.

    Article  Google Scholar 

  15. Y. M. Yu, S. Nam, K. S. Lee, Y. D. Choi and B. O, ibid. 90 (2001) 807.

    Article  Google Scholar 

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Authors and Affiliations

  1. Department of Electrical and Electronic Engineering, University of Miyazaki, 1-1 Gakuen Kibanadai-Nishi, Miyazaki, 889-2192, Japan

    K. Yoshino & T. Kakeno

  2. Department of Applied Physics, Okayama University of Science, 1-1 Ridai-Cho, Okayama, 700-0005, Japan

    M. Yoneta

  3. Institute for Material Research, Tohoku University, 2-1-1 Katahira Aoba Sendai, 980-8577, Japan

    I. Yonenaga

Authors
  1. K. Yoshino
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  2. T. Kakeno
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  3. M. Yoneta
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  4. I. Yonenaga
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Correspondence to K. Yoshino.

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Yoshino, K., Kakeno, T., Yoneta, M. et al. Dislocation of high quality P-doped ZnTe substrate examined by X-ray topography. J Mater Sci: Mater Electron 16, 445–448 (2005). https://doi.org/10.1007/s10854-005-2312-6

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  • DOI: https://doi.org/10.1007/s10854-005-2312-6

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