Skip to main content
SpringerLink
Log in

Hot-zone design and optimization of resistive heater for SiC single crystal growth

  • Electronic materials
  • Published:
Journal of Materials Science Aims and scope Submit manuscript

Abstract

In recent years, SiC single crystal growth technology has been developed toward larger size and thickness to reduce the cost of SiC-based power devices. Resistance heating has gradually become a hot spot for research because the crystals grown by the induction heating display the disadvantages of high stress and defect density. In this paper, the design of resistance heaters for SiC crystal growth was thoroughly investigated via numerical simulation. A simulation of the thermal field generated by different resistive heater arrangements was performed. The stress and dislocation distribution in crystals under different growth conditions were studied. Based on the comprehensive requirements of a small radial temperature gradient and a large growth rate, the arrangement and length of the resistance heater were proposed. This study would serve as a useful guidance for the study of SiC growth by resistive heating.

Graphical Abstract

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6

Similar content being viewed by others

Data availability

The data that support the findings of this study are available from the corresponding author upon reasonable request.

References

  1. Zhuang D, Edgar JH (2005) Wet etching of GaN, AIN, and SiC: a review. Mater Sci Eng R-Rep 48:1. https://doi.org/10.1016/j.mser.2004.11.002

    Article  CAS  Google Scholar 

  2. Yang N, Song B, Wang W, Li H (2022) Control of the temperature field by double induction coils for growth of large-sized SiC single crystals via the physical vapor transport technique. CrystEngComm 24:3475. https://doi.org/10.1039/D2CE00113F

    Article  CAS  Google Scholar 

  3. Yan P, Xiufang C, Xiaobo H et al (2021) Research progress of semi-insulating silicon carbide single crystal substrate. J Synth Cryst 50:619. https://doi.org/10.3969/j.issn.1000-985X.2021.04.007

    Article  Google Scholar 

  4. Feng X, Chen Z, Pu H (2010) Limitation in the thickness of Poly-SiC ring along the edge of 6H-SiC single crystal ingot. J Synth Cryst 39:1124. https://doi.org/10.3724/SP.J.1077.2010.01195

    Article  CAS  Google Scholar 

  5. Ha M-T, Jeong S-M (2022) A review of the simulation studies on the bulk growth of silicon carbide single crystals. J Korean Ceram Soc 59:153. https://doi.org/10.1007/s43207-022-00188-y

    Article  CAS  Google Scholar 

  6. Chen XF, Yang XL, Xie XJ et al (2023) Research progress of large size SiC single crystal materials and devices. Light-Sci Appl 12:8. https://doi.org/10.1038/s41377-022-01037-7

    Article  CAS  Google Scholar 

  7. Zhao YH, Kunieda M, Abe K (2015) Multi-discharge EDM coring of single crystal SiC ingot by electrostatic induction feeding method. Precis Eng-J Int Soc Precis Eng Nanotechnol 41:24. https://doi.org/10.1016/j.precisioneng.2014.12.007

    Article  Google Scholar 

  8. Powell AR, Sumakeris JJ, Khlebnikov Y et al (2016) Bulk growth of large area SiC crystals. Mater Sci Forum 858:5. https://doi.org/10.4028/www.scientific.net/MSF.858.5

    Article  Google Scholar 

  9. Musolino M, Xu XP, Wang H et al (2021) Paving the way toward the world’s first 200mm SiC pilot line. Mater Sci Semicond Process 135:106088. https://doi.org/10.1016/j.mssp.2021.106088

    Article  CAS  Google Scholar 

  10. Xianglong YANG, Xiufang CHEN, Xuejian XIE et al (2022) Growth of 8 inch conductivity type 4H-SiC single crystals. J Synth Cryst 51:1745. https://doi.org/10.16553/j.cnki.issn1000-985x.20220907.001

    Article  Google Scholar 

  11. Tuochen G, Yu G, Chunjun L et al (2022) Fabrication and characterizations of 8-inch n type 4H-SiC single crystal substrate. J Synth Cryst 51:2131. https://doi.org/10.16553/j.cnki.issn1000-985x.20221208.001

    Article  Google Scholar 

  12. Xiong X, Yang X, Chen X et al (2023) Fabrication of 8-inch N-type 4H-SiC single crystal substrate with low dislocation density. J Inorg Mater 38:1371. https://doi.org/10.15541/jim20230325

    Article  Google Scholar 

  13. Su J, Chen XJ, Li Y (2014) Numerical design of induction heating in the PVT growth of SiC crystal. J Cryst Growth 401:128. https://doi.org/10.1016/j.jcrysgro.2014.02.030

    Article  CAS  Google Scholar 

  14. Meyer C, Philip P (2005) Optimizing the temperature profile during sublimation growth of SiC single crystals: control of heating power, frequency, and coil position. Cryst Growth Des 5:1145. https://doi.org/10.1021/cg049641m

    Article  CAS  Google Scholar 

  15. Yang YB, Wang J, Wang YM (2018) Thermal stress simulation of optimized SiC single crystal growth crucible structure. J Cryst Growth 504:31. https://doi.org/10.1016/j.jcrysgro.2018.09.021

    Article  CAS  Google Scholar 

  16. T Fujimoto, M Nakabayashi, S Ushio, et al. (2016) Symposium on Gallium Nitride and Silicon Carbide Power Technologies 6 held during the PRiME Joint International Meeting of The Electrochemical-Society. The Electrochemical-Society-of-Japan, and the Korean-Electrochemical-Society. Honolulu, HI

  17. J Guo, Y Yang, GY Goue, B Raghothamachar, M Dudley (2016) Symposium on Gallium Nitride and Silicon Carbide Power Technologies 6 held during the PRiME Joint International Meeting of The Electrochemical-Society. The Electrochemical-Society-of-Japan, and the Korean-Electrochemical-Society. Honolulu, HI

  18. Ma RH, Zhang H, Dudley M, Prasad V (2003) Thermal system design and dislocation reduction for growth of wide band gap crystals: application to SiC growth. J Cryst Growth 258:318. https://doi.org/10.1016/s0022-0248(03)01540-9

    Article  CAS  Google Scholar 

  19. GA Emelchenko, AA Zhokhov, Tartakovskii II, AA Maksimov, EA Steinman (2012) 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012). St Petersburg, RUSSIA

  20. Liu X, Chen BY, Song LX, Shi EW, Chen ZZ (2010) The behavior of powder sublimation in the long-term PVT growth of SiC crystals. J Cryst Growth 312:1486. https://doi.org/10.1016/j.jcrysgro.2010.01.029

    Article  CAS  Google Scholar 

  21. Wejrzanowski T, Grybczuk M, Tymicki E, Kurzydlowski KJ (2014) International Conference of Computational Methods in Sciences and Engineering 2014 (ICCMSE). Greece, Athens

    Google Scholar 

  22. JY Jung, SI Lee, MS Park, et al. (2012) 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012). Saint Petersburg, RUSSIA

  23. Zhang Q-s, Chen Z-m, H-b Pu, Li L-c, Feng X-f, Gong Z-l (2005) A hydrodynamics model of silicon carbide single crystal growth by PVT and finite element analysis. J Synth Cryst 34:828. https://doi.org/10.1016/j.molcatb.2005.02.001

    Article  CAS  Google Scholar 

  24. Yuan M, Depeng S, Hui Z, Lili Z, Jiazheng L (2022) Thermal field design and optimization of resistance heated large-size SiC crystal growth system. J Synth Cryst 51:371. https://doi.org/10.3969/j.issn.1000-985X.2022.03.001

    Article  Google Scholar 

  25. Luo H, Han XF, Huang YC, Yang DR, Pi XD (2021) Numerical simulation of a novel method for PVT growth of SiC by adding a graphite block. Crystals. https://doi.org/10.3390/cryst11121581

    Article  Google Scholar 

  26. IH STR, LLC (2022) VR Theory Manual. version 8.4. Richmond. VA, USA

  27. Meng DL, Wang YM, Xue H, Ying LY, Wang ZH (2023) Stress simulation of 6-inch SiC single crystal. Vacuum 213:5. https://doi.org/10.1016/j.vacuum.2023.112081

    Article  CAS  Google Scholar 

  28. Zhmakin IA, Kulik AV, Karpov SY, Demina SE, Ramm MS, Makarov YN (2000) Evolution of thermoelastic strain and dislocation density during sublimation growth of silicon carbide. Diam Relat Mater 9:446. https://doi.org/10.1016/s0925-9635(99)00307-6

    Article  CAS  Google Scholar 

  29. A Semennikov, SY Karpov, MS Ramm, AE Romanov, YN Makarov (2004) In Madar R, Camassel J (eds)Silicon Carbide and Related Materials 2003, Pts 1 and 2

  30. Zhang S, Fan G, Li T, Zhao L (2022) Optimization of thermal field of 150 mm SiC crystal growth by PVT method. RSC Adv 12:19936. https://doi.org/10.1039/d2ra02875a

    Article  CAS  PubMed  PubMed Central  Google Scholar 

  31. Jung-Woo C, Jung-Gyu K, Byung-Kyu J et al (2019) Modified hot-zone design for large diameter 4H-SiC single crystal growth. Mater Sci Forum 963:18. https://doi.org/10.4028/www.scientific.net/MSF.963.18

    Article  Google Scholar 

Download references

Acknowledgements

This work was supported by the Key R&D project of Shandong Province [grant number 2022ZLGX02], the Shandong Provincial Youth Innovation Science and Technology Support Program for Colleges and Universities [grant number 2022KJ032].

Funding

This funded by the Key R&D project of Shandong Province [Grant Number 2022ZLGX02], the Shandong Provincial Youth Innovation Science and Technology Support Program for Colleges and Universities [Grant Number 2022KJ032].

Author information

Authors and Affiliations

  1. Institute of Novel Semiconductors, Shandong University, Jinan, 250100, China

    Xinglong Wang, Xuejian Xie, Wancheng Yu, Xianglong Yang, Xiufang Chen, Xiaomeng Li, Yan Peng, Xiaobo Hu & Xiangang Xu

  2. State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China

    Xinglong Wang, Xuejian Xie, Wancheng Yu, Xianglong Yang, Xiufang Chen, Xiaomeng Li, Li Sun, Yan Peng, Xiaobo Hu & Xiangang Xu

Authors
  1. Xinglong Wang
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Xuejian Xie
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Wancheng Yu
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Xianglong Yang
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Xiufang Chen
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Xiaomeng Li
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. Li Sun
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. Yan Peng
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. Xiaobo Hu
    View author publications

    You can also search for this author in PubMed Google Scholar

  10. Xiangang Xu
    View author publications

    You can also search for this author in PubMed Google Scholar

Contributions

The manuscript was written through contributions of all authors. All authors have given approval to the final version of the manuscript.

Corresponding authors

Correspondence to Xuejian Xie or Xiufang Chen.

Ethics declarations

Conflicts of interest

All authors disclosed no relevant relationships.

Ethical Approval

Not Applicable.

Additional information

Handling Editor: Kevin Jones.

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Wang, X., Xie, X., Yu, W. et al. Hot-zone design and optimization of resistive heater for SiC single crystal growth. J Mater Sci (2024). https://doi.org/10.1007/s10853-024-09717-y

Download citation

  • Received:

  • Accepted:

  • Published:

  • DOI: https://doi.org/10.1007/s10853-024-09717-y

Search

Navigation