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Effect of Hot Zone Design on Polycrystalline Silicon Ingot Growth Process by Seeded Directional Solidification

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Abstract

This paper uses the finite element method for numerical simulation and builds a transient global model to simulate polycrystalline silicon ingot growing process in CGsim software. The transient global model is verified through experiments. In addition, the influence of the width and height of the bottom of the side insulation on the temperature field, power consumption and melt-crystal interface (m/c interface) of the solidification process are analyzed. And a new hot zone design method is proposed to protect seed crystal silicon. The results show that the residual height of the seed crystal is increased by 4.5 mm through this design. And increasing the width and height of the side insulation bottom can effectively reduce the power consumption by 5 kW and improve the crystal growth interface, which helps to improve the crystal quality and reduce the cost. This study will provide some references for the optimization of polycrystalline silicon ingot growing process.

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Acknowledgments

This work was funded by Hunan Province Science and Technology Department ‘Innovative Venture Technology Investment Project’ number 2017GK5002 and by Fundamental Research Funds for the Central Universities of Central South University ‘key project’ CX20190199. We thank B.X. Zhao and X.W. Cai for discussions and experimental and technical assistance.

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Authors and Affiliations

  1. School of Energy Science and Engineering, Central South University, Changsha, 410083, China

    Jicheng Zhou, Yaqing Ren, Yujin Cao & Tianshu Feng

  2. Hunan Red Solar Photoelectricity Science And Technology Co.,Ltd, Changsha, 410013, China

    Jingang Duan & Wenfeng Liu

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  1. Jicheng Zhou
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  2. Yaqing Ren
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  3. Yujin Cao
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Correspondence to Jicheng Zhou.

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Zhou, J., Ren, Y., Cao, Y. et al. Effect of Hot Zone Design on Polycrystalline Silicon Ingot Growth Process by Seeded Directional Solidification. Silicon 13, 523–530 (2021). https://doi.org/10.1007/s12633-020-00450-0

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