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Characterization of dislocations at the emission site by emission microscopy in GaN p–n diodes

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Abstract

The character of dislocations at the emission sites observed in p–n diodes on (0001) GaN by emission microscopy under reverse biasing is investigated. The dislocation is a c-type threading dislocation formed by the reaction of c+a and -a dislocations. The c-type threading dislocation is closed-core, screw type, and helical, formed by vacancy desorption with a 0.2 μm cavity approximately 2 μm beneath the surface. The band-edge photoluminescence under multiphoton excitation at the dislocation in the p layer is brighter than that of the surrounding non-defective area.

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The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Acknowledgments

This study was partially supported by Japan Society for the Promotion of Science KAKENHI (Grant No. 20K05176). The authors are deeply grateful to Dr. S. Kobayashi for the insightful discussion on the contrast in the STEM images.

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Authors and Affiliations

  1. Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta, Nagoya, 456-8587, Japan

    Yukari Ishikawa, Yoshihiro Sugawara, Daisaku Yokoe, Koji Sato & Yongzhao Yao

  2. MIRISE Technologies Corporation, Nisshin, 470-0111, Japan

    Kenta Watanabe & Takashi Okawa

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  1. Yukari Ishikawa
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  2. Yoshihiro Sugawara
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Contributions

YI: Conceptualization (lead); writing—original draft (lead); data curation (equal); investigation (equal); writing—review and editing (equal); funding acquisition (equal). YS: Investigation (equal); data curation (equal); writing—review and editing (equal). DY: Investigation (equal); writing—review and editing (equal). KS: Investigation (equal); writing—review and editing (equal). YY: Writing—review and editing (equal). KW: Investigation (equal); resources(equal); writing—review and editing (equal). TO: Conceptualization (equal); resources (lead); investigation (equal); writing—review and editing (equal); funding acquisition (lead).

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Correspondence to Yukari Ishikawa.

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Supplementary video shows MPPL images of backside and surface of the same area.

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Ishikawa, Y., Sugawara, Y., Yokoe, D. et al. Characterization of dislocations at the emission site by emission microscopy in GaN p–n diodes. J Mater Sci 58, 9221–9232 (2023). https://doi.org/10.1007/s10853-023-08596-z

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