Skip to main content
SpringerLink
Log in

Effect of SiC nanoparticles on SAC305-TSV reliability under thermal load

  • Ceramics
  • Published:
Journal of Materials Science Aims and scope Submit manuscript

Abstract

Through silicon via (TSV) is a kind of three-dimensional (3D) packaging technology with great development potential, which can realize short distance electrical interconnection. Currently, there were few related studies on filling or thermal reliability of SAC305-TSV. Because of its thermal expansion coefficient and other physical property parameters do not match with other materials involved in TSV and the crystal structure characteristics of Sn, SAC305-TSV has service reliability problems under the action of thermal load. In this paper, by adding different contents of SiC nanoparticles to SAC305, the performance of SAC305 was improved, and the composite solder with better comprehensive performance was obtained. Besides, the thermal reliability of TSV filled with composite solder was analyzed by thermal shock and aging test with SEM and EBSD.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
Figure 12
Figure 13
Figure 14
Figure 15
Figure 16
Figure 17
Figure 18

Similar content being viewed by others

References

  1. Lai YS, Tong HM, Tu KN (2009) Recent research advances in Pb-free solders[J]. Microelectron Reliab 49(3):221–222

    Article  CAS  Google Scholar 

  2. J.Shao, T.Shi, D.U.Li, et al. Analysis on annealing-induced stress of blind-via TSV using FEM[J]. Front Mech Eng, 2017, 13(3).

  3. Jeong IH, Roh MH, Jung F et al (2014) Analysis of the electrical characteristics and structure of Cu-Filled TSV with thermal shock test[J]. Electron Mater Lett 10(3):649–653

    Article  CAS  Google Scholar 

  4. An T, Qin F, Chen S et al (2018) The effect of the diffusion creep behavior on the TSV-Cu protrusion morphology during annealing[J]. J Mater Sci: Mater Electron 29:16305–16316

    CAS  Google Scholar 

  5. A.Heryanto, W.N.Putra, A.Trigg, et al. Effect of Copper TSV Annealing on Via Protrusion for TSV Wafer Fabrication[J]. Journal of Electronic Materials, 2012, 41(9):2533–2542.

  6. Sharma A, Jung DH, Roh MH et al (2016) (2016) Fabrication and shear strength analysis of Sn-3.5Ag/Cu-filled TSV for 3D microelectronic packaging[J]. Electron Mater Lett 12(6):1–8

    Article  Google Scholar 

  7. Yamaguchi, Y Yamashita, A Furusawa et al. (2004) Properties of solder joints using Sn-Ag-Bi-in solder, Mater Trans, 45(4) 1282-1289.

  8. Chan D, Nie X, Bhate D et al (2013) Constitutive models for intermediate- and high-strain rate flow behavior of Sn3.8Ag0.7Cu and Sn1.0Ag0.5Cu solder alloys[J]. IEEE Trans Compon, Packag Manuf Technol 3(1):133–146

    Article  CAS  Google Scholar 

  9. Lu M, Shih D, Lauro P et al (2008) Effect of Sn grain orientation on electromigration degradation mechanism in high Sn-based Pb-free solders[J]. Appl Phys Lett 92(21):211909

    Article  Google Scholar 

  10. El-Daly AA, Fawzy A, Mansour SF et al (2013) Novel SiC nanoparticles-containing Sn–1.0Ag–0.5Cu solder with good drop impact performance[J]. Mater Sci Eng A 578:62–71

    Article  CAS  Google Scholar 

  11. El-Daly AA, Al-Ganainy GS, Fawzy A et al (2014) Structural characterization and creep resistance of nano-silicon carbide reinforced Sn-1.0Ag-0.5Cu lead-free solder alloy[J]. Mater Design 55:837–845

    Article  CAS  Google Scholar 

  12. El-Daly AA, El-Taher AM (2013) Improved strength of Ni and Zn-doped Sn–2.0Ag–0.5Cu lead-free solder alloys under controlled processing parameters[J]. Mater Design 47:607–614

    Article  CAS  Google Scholar 

  13. Pal MK, Gergely G, Koncz-Horváth D et al (2021) Investigation of microstructure and wetting behavior of Sn3Ag0.5Cu (SAC305) lead-free solder with additions of 1 wt% SiC on copper substrate[J]. Intermetallics 128:106991

    Article  CAS  Google Scholar 

Download references

Acknowledgements

The authors acknowledge the support of this work from Beijing Young Top-Notch Talent Support Program (CIT&TCD201804007).

Author information

Authors and Affiliations

  1. College of Material Science and Engineering, Beijing University of Technology, Beijing, 100124, China

    Jiaojiao Wang, Limin Ma, Yishu Wang & Fu Guo

  2. Key Laboratory of Advanced Functional Materials, Education Ministry of China, Beijing University of Technology, Beijing, 100124, People’s Republic of China

    Limin Ma, Yishu Wang & Fu Guo

Authors
  1. Jiaojiao Wang
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Limin Ma
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Yishu Wang
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Fu Guo
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Limin Ma.

Additional information

Handling Editor: N. Ravishankar.

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Wang, J., Ma, L., Wang, Y. et al. Effect of SiC nanoparticles on SAC305-TSV reliability under thermal load. J Mater Sci 57, 1623–1632 (2022). https://doi.org/10.1007/s10853-021-06821-1

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10853-021-06821-1

Search

Navigation