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Optimization of the thermoelectric performance of α-MgAgSb-based materials by Zn-doping

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Abstract

Recently, α-MgAgSb-based materials have proved to be a kind of potential thermoelectric materials around room temperature. Here, a series of Zn-doped α-MgAgSb have been successfully synthesized by high-temperature milting and spark plasma sintering combined with annealing. Effect of Zn-doping on the microstructure and thermoelectric performance of α-MgAgSb has been investigated. Results show that Zn-doping can enhance the crystallization and carrier concentration, resulting in an increased electrical performance. Simultaneously, multiscales of nanodots, defects, grain boundaries and impurities have been introduced to reduce the lattice thermal performance. Finally, both the optimized electrical and thermal properties significantly promote the thermoelectric performance. A peak ZT of 1.29 has achieved for Mg0.985Zn0.015Ag0.97Sb0.99 at 550 K, about 18% higher than MgAg0.97Sb0.99, which indicates that Zn-doping into Mg-site is beneficial to optimize the performance of α-MgAgSb-based thermoelectric materials.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (51501014), the Undergraduates Research Training Program (2020J00113) and 2020 “Practical Training Program” for the Cross-training of High-level Talents in Beijing Universities and Colleges.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Beijing Institute of Petrochemical Technology, Beijing, 102617, China

    Ting Zhang, Baokun Dong & Xuan Wang

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  1. Ting Zhang
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  2. Baokun Dong
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  3. Xuan Wang
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Correspondence to Ting Zhang.

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Zhang, T., Dong, B. & Wang, X. Optimization of the thermoelectric performance of α-MgAgSb-based materials by Zn-doping. J Mater Sci 56, 13715–13722 (2021). https://doi.org/10.1007/s10853-021-06171-y

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