Abstract
Due to their polymorphism, TiO2 films are quintessential components of state-of-the-art functional materials and devices for various applications from dynamic random access memory to solar water splitting. However, contrary to other semiconductors/dielectric materials, the relationship between structural/morphological and electrical properties at the nano and microscales remains unclear. In this context, the morphological characteristics of TiO2 films obtained by metal–organic chemical vapor deposition (MOCVD) and plasma-enhanced chemical vapor deposition (PECVD), the latter including nitrogen doping, are investigated and they are linked to their in- and out-plane electrical properties. A transition from dense to tree-like columnar morphology is observed for the MOCVD films with increasing deposition temperature. It results in the decrease in grain size and the increase in porosity and disorder, and subsequently, it leads to the decrease in lateral carrier mobility. The increase in nitrogen amount in the PECVD films enhances the disorder in their pillar-like columnar morphology along with a slight increase in density. A similar behavior is observed for the out-plane current between the low temperature MOCVD films and the undoped PECVD ones. The pillar-like structure of the latter presents a lower in-plane resistivity than the low temperature MOCVD films, whereas the out-plane resistivity is lower. The tree-like columnar structure exhibits poor in- and out-plane conductivity properties, whereas pillar-like and dense TiO2 exhibits similar in- and out-plane conductivities even if their morphologies are noticeably different.
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Acknowledgements
This work was supported by funding from Toulouse Tech'Interlab and Association Instituts Carnot.
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This project has been funded with support from Lebanese University (UL) in collaboration with AZM&SAADÉ foundation.
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We are indebted to Olivier Debieu, Claire Tendero, Diane Samelor, Daniel Sadowski, Cédric Charvillat, Olivier Marsan, Jérôme Esvan, Benoît Malard, Bertrand Viguier, Alessandro Pugliara (Cirimat), Stéphane Leblond du Plouy, Arnaud Proietti, Claudie Josse (UMS Castaing) and Emmanouil Soulos (IEM) for their contributions to this work.
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Appendices
Appendix
Appendix 1: TiO2 thin films crystallographic orientation
Figure
10 compares XRD patterns obtained in a theta-theta mode on TiO2 films deposited by MOCVD on silicon and SiO2 substrates, respectively at the different Td. For both substrates, peaks measured at 25.4, 38.5, 48.1, 55.1, 62.7, 70.3, 75 and 76° correspond to the (101), (112), (020), (121), (024), (220), (125) and (031) crystallographic planes of anatase, respectively. Concerning films deposited at temperature ranging from 325 °C to 400 °C on Si substrate (Fig. 10a), similar diffractograms are obtained with two major peaks (101) and (020). At higher temperature (450 °C–500 °C), we assist to the vanishing of (101) and (020) peaks, whereas the (112) and the (220) peaks increase. The same behavior is observed for films deposited on SiO2 substrate. These results emphasize that for our TiO2 films the substrate has only a slight influence on films morphology.
Appendix 2: TiO2 absorption spectrum
Figure 11a represents the transmission spectra for various deposition temperatures. At high temperature, interference fringes are clearly visible. Interferences and increasing of transmission signal compared to low temperature are due to high surface roughness related to large structures. Figures from A2b to A2e depict the Tauc plot of the absorption coefficient α for indirect semiconductors related to transmission spectrum (Fig. 11a). The tangent plot permits to determine energy gap. However, some issues appear at low and high temperatures. For low temperature (325 °C and 350 °C), the gap determination is impossible as the linear part is not reached. For high temperature (450 °C and 500 °C), the gap determination is possible but interference fringes impact determination reliability.
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Miquelot, A., Youssef, L., Villeneuve-Faure, C. et al. In- and out-plane transport properties of chemical vapor deposited TiO2 anatase films. J Mater Sci 56, 10458–10476 (2021). https://doi.org/10.1007/s10853-021-05955-6
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DOI: https://doi.org/10.1007/s10853-021-05955-6