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Chemical pressure in the correlated narrow-gap semiconductor FeGa3

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Abstract

In the correlated narrow-gap semiconductor FeGa3, 1.25 Ga atoms per formula unit can be replaced by Al atoms providing chemical pressure of ~ 1.2 GPa. The resulting FeGa3−yAly solid solution (0 ≤ y ≤ 1.25) crystallizes in the parent structure type with Al atoms preferentially occupying one of the two crystallographic positions of Ga. As revealed by electrical resistivity and heat capacity measurements, FeGa3−yAly exhibits nonmetallic properties for y = 0.937(9) similar to the parent compound FeGa3 demonstrating that the electronic structure is not significantly altered by the chemical pressure. This result is corroborated by the electronic structure calculations, which show that the band gap is only slightly reduced in FeGa3−yAly for y = 1.

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Acknowledgements

The authors thank Dr. Sergey Kazakov for his help with the PXRD experiments. The work in Moscow was supported by the Russian Foundation for Basic Research, Grant No. 17-03-00111. V.Yu.V. also appreciates the support from the European Regional Development Fund, project TK134. A.A.T. is grateful for the financial support by the Federal Ministry for Education and Research under the Sofja Kovalevskaya Award of the Alexander von Humboldt Foundation. We acknowledge the use of the Bruker D8 Advance X-ray powder diffractometer purchased under the Lomonosov MSU program of development.

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Authors and Affiliations

  1. Department of Chemistry, Lomonosov Moscow State University, Moscow, Russia, 119991

    Valeriy Yu. Verchenko & Andrei V. Shevelkov

  2. National Institute of Chemical Physics and Biophysics, 12618, Tallinn, Estonia

    Valeriy Yu. Verchenko

  3. Experimental Physics VI, Center for Electronic Correlations and Magnetism, Institute of Physics, University of Augsburg, 86135, Augsburg, Germany

    Alexander O. Zubtsovskii & Alexander A. Tsirlin

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  1. Valeriy Yu. Verchenko
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  2. Alexander O. Zubtsovskii
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  3. Alexander A. Tsirlin
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  4. Andrei V. Shevelkov
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Correspondence to Valeriy Yu. Verchenko.

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Verchenko, V.Y., Zubtsovskii, A.O., Tsirlin, A.A. et al. Chemical pressure in the correlated narrow-gap semiconductor FeGa3. J Mater Sci 54, 2371–2378 (2019). https://doi.org/10.1007/s10853-018-3012-y

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  • DOI: https://doi.org/10.1007/s10853-018-3012-y

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