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Analysis of dislocation networks in crept single crystal nickel-base superalloy

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Abstract

The creep behaviour at 1050 °C of <001> oriented MC2 single crystals is analysed by means of SEM and TEM observations. The γ–γ′ rafting process occurs rapidly and appears to be correlated with the establishment of a pseudo-stationary creep stage. The regular and stable networks are seen in the (001) interfaces. A detailed analysis of dislocation networks in these (001) interfaces shows that they are constituted by an association of hexagonal and square cells of a/2 <110> dislocations. The square part is unstable and gives rise to the systematic creation of a <001> dislocations included in the misfit dislocation network.

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Acknowledgements

The authors dedicate this work to the late Pr. A. Coujou whose contribution to this work has been extremely valuable. The authors would like to thank the CEMES Laboratory of Toulouse, France, that allowed us to conduct this work. This work was supported by ONERA.

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Authors and Affiliations

  1. LMCN, Faculté des Sciences et Techniques, Marrakech, Morocco

    O. Boualy & M. Benyoucef

  2. CEMES/CNRS, 29 rue J. Marvig, 31055, Toulouse Cedex, France

    N. Clément

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  1. O. Boualy
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  2. N. Clément
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  3. M. Benyoucef
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Correspondence to M. Benyoucef.

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Boualy, O., Clément, N. & Benyoucef, M. Analysis of dislocation networks in crept single crystal nickel-base superalloy. J Mater Sci 53, 2892–2900 (2018). https://doi.org/10.1007/s10853-017-1699-9

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  • DOI: https://doi.org/10.1007/s10853-017-1699-9

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